MDS1656 datasheet(4/6 Pages) MGCHIP

Part #	MDS1656

Description	Single N-Channel Trench MOSFET 30V, 7.2A, 28m(ohm)

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Manufacturer	MGCHIP [MagnaChip Semiconductor.]

Direct Link	http://www.magnachip.co.kr

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4 / 6 page

August 2008. Version 1.0

MagnaChip Semiconductor Ltd

.

4

Fig.7 Gate Charge Characteristics

Fig.8 Capacitance Characteristics

Fig.9 Maximum Safe Operating Area

Fig.10 Maximum Drain Current vs. Case

Temperature

Fig.11

Transient

Thermal

Response

Curve

0

2

4

6

8

0

2

4

6

8

10

Note : I

※

D = 20A

Q

G, Total Gate Charge [nC]

0

5

10

15

20

25

30

0

50

100

150

200

250

300

350

400

450

500

C

iss = Cgs + Cgd (Cds = shorted)

C

oss = Cds + Cgd

C

rss = Cgd

Notes ;

※

1. V

GS = 0 V

2. f = 1 MHz

C

rss

C

oss

C

iss

V

DS, Drain-Source Voltage [V]

10

-1

10

0

10

1

10

2

10

-1

10

0

10

1

10

2

1s

100 µs

100 ms

DC

10 ms

1 ms

Operation in This Area

is Limited by R

DS(on)

Single Pulse

T

J=Max rated

T

C=25

℃

V

DS, Drain-Source Voltage [V]

25

50

75

100

125

150

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

4.5

5.0

5.5

6.0

6.5

7.0

7.5

8.0

T

C, Case T em perature [

]

℃

10

-6

10

-5

10

-4

10

-3

10

-2

10

-1

10

0

10

1

10

2

10

3

10

4

10

-1

10

0

10

1

10

2

Notes :

※

Duty Factor, D=t

1/t2

PEAK T

J = PDM * Zθ JC* Rθ JC

(t) + T

C

R

Θ JA

=100 /W

℃

single pulse

D=0.5

0.02

0.2

0.05

0.1

0.01

t

1, Rectangular Pulse Duration [sec]

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