MDP15N075TH datasheet(1/6 Pages) MGCHIP

Part #	MDP15N075TH

Description	Single N-channel Trench MOSFET 150V, 120A, 7.5m(ohm)

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Manufacturer	MGCHIP [MagnaChip Semiconductor.]

Direct Link	http://www.magnachip.co.kr

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Absolute Maximum Ratings (Ta = 25

oC)

Characteristics

Symbol

Rating

Unit

Drain-Source Voltage

VDSS

150

V

Gate-Source Voltage

VGSS

±20

V

Continuous Drain Current

(1)

TC=25

oC (Silicon Limited)

ID

144

A

TC=25

oC (Package Limited)

120

TC=100

oC

91

Pulsed Drain Current

(3)

IDM

480

Power Dissipation

TC=25

oC

PD

312

W

TC=100

oC

125

Single Pulse Avalanche Energy

(2)

EAS

450

mJ

Junction and Storage Temperature Range

TJ, Tstg

-55~150

oC

Thermal Characteristics

Characteristics

Symbol

Rating

Unit

Thermal Resistance, Junction-to-Ambient

(1)

RθJA

62.5

oC/W

Thermal Resistance, Junction-to-Case

RθJC

0.4

MDP15N075

Single N-channel Trench MOSFET 150V, 120A, 7.5m

Ω

Features



VDS = 150V



ID = 120A @VGS = 10V



Very low on-resistance RDS(ON)

< 7.5

mΩ @VGS = 10V



100% UIL Tested



100% Rg Tested

General Description

The MDP15N075 uses advanced MagnaChip’s MV MOSFET

Technology, which provides high performance in on-state resistance,

fast switching performance, and excellent quality.

These devices can also be utilized in industrial applications

such as Low Power Drives of E-bike (E-Vehicles), DC/DC converter,

and general purpose applications.

TO-220

D

G

S

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MDP15N075TH Datasheet(PDF) 1 Page - MagnaChip Semiconductor.

MDP15N075TH Datasheet(HTML) 1 Page - MagnaChip Semiconductor.

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