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MDP9N50TH Datasheet(PDF) 2 Page - MagnaChip Semiconductor. |
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MDP9N50TH Datasheet(HTML) 2 Page - MagnaChip Semiconductor. |
2 / 6 page Dec 2009. Version 1.1 MagnaChip Semiconductor Ltd . 2 Ordering Information Part Number Temp. Range Package Packing RoHS Status MDP9N50TH -55~150 oC TO-220 Tube Halogen Free Electrical Characteristics (Ta =25 oC) Characteristics Symbol Test Condition Min Typ Max Unit Static Characteristics Drain-Source Breakdown Voltage BVDSS ID = 250µA, VGS = 0V 500 - - Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250µA 3.0 - 5.0 V Drain Cut-Off Current IDSS VDS = 500V, VGS = 0V - - 1 µA Gate Leakage Current IGSS VGS = ±30V, VDS = 0V - - 100 nA Drain-Source ON Resistance RDS(ON) VGS = 10V, ID = 4.5A 0.72 0.85 Forward Transconductance gfs VDS = 30V, ID = 4.5A - 7 - S Dynamic Characteristics Total Gate Charge Qg - 19 Gate-Source Charge Qgs - 5.7 Gate-Drain Charge Qgd VDS = 400V, ID = 9.0A, VGS = 10V (3) - 7.6 nC Input Capacitance Ciss - 780 Reverse Transfer Capacitance Crss - 4.0 Output Capacitance Coss VDS = 25V, VGS = 0V, f = 1.0MHz - 100 pF Turn-On Delay Time td(on) - 18 Rise Time tr - 34 Turn-Off Delay Time td(off) - 38 Fall Time tf VGS = 10V, VDS = 250V, ID = 9.0A, RG = 25 (3) - 27 ns Drain-Source Body Diode Characteristics Maximum Continuous Drain to Source Diode Forward Current IS - 9.0 - A Source-Drain Diode Forward Voltage VSD IS = 9.0A, VGS = 0V - 1.4 V Body Diode Reverse Recovery Time trr - 272 ns Body Diode Reverse Recovery Charge Qrr IF = 9.0A, dl/dt = 100A/µs (3) - 2.0 µC Note : 1. Pulse width is based on R θJC & R θJA and the maximum allowed junction temperature of 150°C. 2. Pulse test: pulse width ≤300us, duty cycle≤2%, pulse width limited by junction temperature TJ(MAX)=150°C. 3. ISD ≤9.0A, di/dt≤200A/us, VDD=50V, Rg =25 , Starting TJ=25°C 4. L=6.7mH, IAS=9.0A, VDD=50V, , Rg =25 , Starting TJ=25°C |
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