MDP8N60 datasheet(1/6 Pages) MGCHIP

Part #	MDP8N60

Description	N-Channel MOSFET 600V, 8A, 1.0(ohm)

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Manufacturer	MGCHIP [MagnaChip Semiconductor.]

Direct Link	http://www.magnachip.co.kr

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Dec. 2014 Version 2.2

MagnaChip Semiconductor Ltd.

1

Absolute Maximum Ratings (Ta = 25

oC)

Characteristics

Symbol

Rating

Unit

Drain-Source Voltage

VDSS

600

V

Drain-Source Voltage @ Tjmax

VDSS @ Tjmax

660

V

Gate-Source Voltage

VGSS

±30

V

Continuous Drain Current (※)

TC=25

oC

ID

8.0

A

TC=100

oC

4.9

A

Pulsed Drain Current

(1)

IDM

32

A

Power Dissipation

TC=25

oC

PD

144

W

W/

oC

Derate above 25

oC

1.15

Repetitive Avalanche Energy EAR

(1)

EAR

14.4

mJ

Peak Diode Recovery dv/dt

(3)

Dv/dt

4.5

V/ns

Single Pulse Avalanche Energy

(4)

EAS

320

mJ

Junction and Storage Temperature Range

TJ, Tstg

-55~150

oC

※ Id limited by maximum junction temperature

Thermal Characteristics

Characteristics

Symbol

Rating

Unit

Thermal Resistance, Junction-to-Ambient

(1)

RθJA

62.5

oC/W

Thermal Resistance, Junction-to-Case

(1)

RθJC

0.87

MDP8N60

N-Channel MOSFET 600V, 8A, 1.0Ω

General Description

The

MDP8N60

uses

advanced

MagnaCh

ip’s MOSFET

Technology, which provides low on-state resistance, high

switching performance and excellent quality.

MDP8N60 is suitable device for SMPS, high Speed switching

and general purpose applications.

Features



VDS = 600V



VDS = 660V

@ Tjmax



ID =8.0A

@ VGS = 10V



RDS(ON) ≤ 1.0Ω

@ VGS = 10V

Applications



Power Supply



PFC



High Current, High Speed Switching

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MDP8N60 Datasheet(PDF) 1 Page - MagnaChip Semiconductor.

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