MDP06N090TH datasheet(4/6 Pages) MGCHIP

Part #	MDP06N090TH

Description	Single N-channel Trench MOSFET 60V, 62A, 9.0m(ohm)

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Manufacturer	MGCHIP [MagnaChip Semiconductor.]

Direct Link	http://www.magnachip.co.kr

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4 / 6 page

Apr. 2015. Version 1.0

MagnaChip Semiconductor Ltd.

4

Fig.7 Gate Charge Characteristics

Fig.8 Capacitance Characteristics

Fig.9 Maximum Safe Operating Area

Fig.10 Maximum Drain Current vs.

Case Temperature

Fig.11 Transient Thermal Response

Curve

25

50

75

100

125

150

0

10

20

30

40

50

60

70

80

T

C, Case Temperature [

℃]

10

-5

10

-4

10

-3

10

-2

10

-1

10

0

10

1

10

-2

10

-1

10

0

※ Notes :

Duty Factor, D=t

1/t2

PEAK T

J = PDM * Z

θ JC* Rθ JC(t) + TC

single pulse

D=0.5

0.02

0.2

0.05

0.1

0.01

t

1, Rectangular Pulse Duration [sec]

0

5

10

15

20

25

30

0

500

1000

1500

2000

2500

3000

3500

C

iss = Cgs + Cgd (Cds = shorted)

C

oss = Cds + Cgd

C

rss = Cgd

※ Notes ;

1. V

GS = 0 V

2. f = 1 MHz

C

rss

C

oss

C

iss

V

DS, Drain-Source Voltage [V]

0

5

10

15

20

25

30

35

0

2

4

6

8

10

V

DS = 30V

※ Note : I

D = 50A

Q

G, Total Gate Charge [nC]

10

-1

10

0

10

1

10

2

10

-1

10

0

10

1

10

2

10

3

10 us

10 ms

1 ms

DC

100 us

100 ms

Operation in This Area

is Limited by R

DS(on)

Single Pulse

T

J=Max rated

T

C=25

℃

V

DS, Drain-Source Voltage [V]

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