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AS4C256M8D3-15BIN Datasheet(PDF) 7 Page - Alliance Semiconductor Corporation

Part # AS4C256M8D3-15BIN
Description  Fully synchronous operation
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Manufacturer  ALSC [Alliance Semiconductor Corporation]
Direct Link  https://www.alliancememory.com
Logo ALSC - Alliance Semiconductor Corporation

AS4C256M8D3-15BIN Datasheet(HTML) 7 Page - Alliance Semiconductor Corporation

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AS4C256M8D3
Confidential
7
Rev. 3.0
Aug. /2014
DM
Input
Data Input Mask: Input data is masked when DM is sampled HIGH during a write cycle.
DM has an optional use as TDQS on the x8.
DQ0 – DQ7
Input /
Output
Data I/O: The DQ0-DQ7 input and output data are synchronized with positive and negative
edges of DQS and DQS#. The I/Os are byte-maskable during Writes.
ODT
Input
On Die Termination: ODT (registered HIGH) enables termination resistance internal to
the DDR3 SDRAM. When enabled, ODT is applied to each DQ, DQS, DQS#, DM/TDQS
and TDQS# signal. (When TDQS is enabled via Mode Register A11=1 in MR1) The ODT
pin will be ignored if Mode-registers, MR1and MR2, are programmed to disable RTT.
RESET#
Input
Active Low Asynchronous Reset: Reset is active when RESET# is LOW, and inactive
when RESET# is HIGH. RESET# must be HIGH during normal operation. RESET# is a
CMOS rail to rail signal with DC high and low at 80% and 20% of VDD
VDD
Supply Power Supply: +1.5V
0.075V
VSS
Supply Ground
VDDQ
Supply DQ Power: +1.5V
0.075V.
VSSQ
Supply DQ Ground
VREFCA
Supply Reference voltage for CA
VREFDQ
Supply Reference voltage for DQ
ZQ
Supply Reference pin for ZQ calibration.
NC
-
No Connect: These pins should be left unconnected.


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