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K7A403609A Datasheet(PDF) 7 Page - Samsung semiconductor |
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K7A403609A Datasheet(HTML) 7 Page - Samsung semiconductor |
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7 / 17 page  K7A401809A 128Kx36 & 256Kx18 Synchronous SRAM - 7 - Rev 3.0 August 2000 K7A403609A PASS-THROUGH TRUTH TABLE Notes : 1. This operation makes written data immediately available at output during a read cycle preceded by a write cycle.s PREVIOUS CYCLE PRESENT CYCLE NEXT CYCLE OPERATION WRITE OPERATION CS1 WRITE OE Write Cycle, All bytes Address=An-1, Data=Dn-1 All L Initiate Read Cycle Address=An Data=Qn-1 for all bytes L H L Read Cycle Data=Qn Write Cycle, All bytes Address=An-1, Data=Dn-1 All L No new cycle Data=Qn-1 for all bytes H H L No carryover from previous cycle Write Cycle, All bytes Address=An-1, Data=Dn-1 All L No new cycle Data=High-Z H H H No carryover from previous cycle Write Cycle, One byte Address=An-1, Data=Dn-1 One L Initiate Read Cycle Address=An Data=Qn-1 for one byte L H L Read Cycle Data=Qn Write Cycle, One byte Address=An-1, Data=Dn-1 One L No new cycle Data=Qn-1 for one byte H H L No carryover from previous cycle ABSOLUTE MAXIMUM RATINGS* *Note : Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operating sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. PARAMETER SYMBOL RATING UNIT Voltage on VDD Supply Relative to VSS VDD -0.3 to 4.6 V Voltage on VDDQ Supply Relative to VSS VDDQ -0.3 to 4.6 V Voltage on Input Pin Relative to VSS VIN -0.3 to VDD+0.5 V Voltage on I/O Pin Relative to VSS VIO -0.3 to VDDQ+0.5 V Power Dissipation PD 2.2 W Storage Temperature TSTG -65 to 150 °C Operating Temperature TOPR 0 to 70 °C Storage Temperature Range Under Bias TBIAS -10 to 85 °C CAPACITANCE*(TA=25 °C, f=1MHz) *Note : Sampled not 100% tested. PARAMETER SYMBOL TEST CONDITION MIN MAX UNIT Input Capacitance CIN VIN=0V - 5 pF Output Capacitance COUT VOUT=0V - 7 pF OPERATING CONDITIONS at 3.3V I/O (0 °C≤ TA≤70°C) PARAMETER SYMBOL MIN Typ. MAX UNIT Supply Voltage VDD 3.135 3.3 3.6 V VDDQ 3.135 3.3 3.6 V Ground VSS 0 0 0 V OPERATING CONDITIONS at 2.5V I/O(0 °C ≤ TA ≤ 70°C) *Note : -36(275MHz) only support 2.5V I/O. PARAMETER SYMBOL MIN Typ. MAX UNIT Supply Voltage VDD 3.135 3.3 3.6 V VDDQ 2.375 2.5 2.9 V Ground VSS 0 0 0 V |
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