2

Symbol

Parameter

Unit

Abs Max

ForwardCurrent(1

µsPulse)

Amp

1

PeakInverseVoltage

V

50

JunctionTemperature

°C

150

StorageTemperature

°C

-65to150

°C/W

167

Notes:

1. Operationinexcessofanyoneoftheseconditionsmayresultinpermanentdamagetothedevice.

2. ThermalResistanceismeasuredfromjunctiontoboardusingIRmethod.

Electrical Specifications, Tc = +25°C (Each Diode)

Minimum Breakdown Voltage

Typical Series Resistance

Typical Total Capacitance

50

3.0/1.5*

0.22

TestCondition

f=1MHz

Typical Performance for HSMP-3866 Quad PIN Diode

π Attenuator @ +25°C

Parameter

Test Condition

Units

Typical

InsertionLoss

Vc=5V,V+=1.2V,Freq=1GHz

dB

-2.5

ReturnLoss

Vc=0V,V+=1.2V,Freq=1GHz

dB

-18

Attenuation

Vc=0V,V+=1.2V,Freq=1GHz

dB

36

IP3

Vc=1.5V,V+=1.2V,Freq=1GHz

dBm

30

IP3

Vc=5.0V,V+=1.2V,Freq=1GHz

dBm

40

IP3

Vc=1.5V,V+=1.2V,Freq=300MHz

dBm

25

IP3

Vc=5.0V,V+=1.2V,Freq=300MHz

dBm

37

IP3

Vc=1.5V,V+=1.2V,Freq=100MHz

dBm

23

IP3

Vc=5.0V,V+=1.2V,Freq=100MHz

dBm

35

Notes:

1. MeasurementaboveobtainedusingWidebandRFcircuitdesignshowninFigure1&2

Typical Performance, Tc = +25°C (Each Diode)

Total Resistance

Carrier Lifetime

t(ns)

Reverse Recovery Time

Total Capacitance

22

500

80

0.22

TestCondition

f=1MHz

90%Recovery

f=1MHz