IXGT30N60BD1 datasheet(2/5 Pages) IXYS

Part #	IXGT30N60BD1

Description	HiPerFASTTM IGBT with Diode

Download	5 Pages

Scroll/Zoom	100%

Manufacturer	IXYS [IXYS Corporation]

Direct Link	http://www.ixys.com

Logo

2 / 5 page

2 - 5

Symbol

Test Conditions

Characteristic Values

(T

J = 25°C, unless otherwise specified)

min.

typ.

max.

g

fs

I

C

= I

C90; VCE = 10 V,

25

S

Pulse test, t

£ 300 ms, duty cycle £ 2 %

C

ies

2700

pF

C

oes

V

CE = 25 V, VGE = 0 V, f = 1 MHz

240

pF

C

res

50

pF

Q

g

110

nC

Q

ge

I

C

= I

C90, VGE = 15 V, VCE = 0.5 VCES

22

nC

Q

gc

40

nC

t

d(on)

25

ns

t

ri

30

ns

t

d(off)

130

220

ns

t

fi

100

190

ns

E

off

1.0

2.0

mJ

t

d(on)

25

ns

t

ri

35

ns

E

on

1.0

mJ

t

d(off)

200

ns

t

fi

230

ns

E

off

2.5

mJ

R

thJC

0.62 K/W

R

thCK

(TO-247 AD)

0.25

K/W

Reverse Diode (FRED)

Characteristic Values

(T

J = 25°C, unless otherwise specified)

Symbol

Test Conditions

min.

typ.

max.

V

F

I

F

= I

C90, VGE = 0 V, Pulse test

T

J = 150°C

1.6

V

t

£ 300 ms, duty cycle d £ 2 %

2.5

V

I

RM

I

F

= I

C90, VGE = 0 V, -diF/dt = 100 A/ms6

A

t

rr

V

R = 100 V

T

J =100°C

100

ns

I

F

= 1 A; -di/dt = 100 A/

ms; V

R = 30 V

25

ns

R

thJC

0.9 K/W

Inductive load, T

J = 25°C

I

C = IC90, VGE = 15 V, L = 100 mH,

V

CE = 0.8 VCES, RG = Roff = 4.7 W

Remarks: Switching times may

increase for V

CE (Clamp) > 0.8 • VCES,

higher T

J or increased RG

Inductive load, T

J = 150°C

I

C = IC90, VGE = 15 V, L = 100 mH

V

CE = 0.8 VCES, RG = Roff = 4.7 W

Remarks: Switching times may

increase for V

CE (Clamp) > 0.8 • VCES,

higher T

J or increased RG

IXGH 30N60BD1

IXGT 30N60BD1

TO-247 AD (IXGH) Outline

Dim. Millimeter

Inches

Min.

Max.

Min.

Max.

A

19.81 20.32

0.780 0.800

B

20.80 21.46

0.819 0.845

C

15.75 16.26

0.610 0.640

D

3.55

3.65

0.140 0.144

E

4.32

5.49

0.170 0.216

F

5.4

6.2

0.212 0.244

G

1.65

2.13

0.065 0.084

H

-

4.5

-

0.177

J

1.0

1.4

0.040 0.055

K

10.8

11.0

0.426 0.433

L

4.7

5.3

0.185 0.209

M

0.4

0.8

0.016 0.031

N

1.5

2.49

0.087 0.102

TO-268AA (D3 PAK)

Dim.

Millimeter

Inches

Min.

Max.

Min.

Max.

A

4.9

5.1

.193

.201

A

1

2.7

2.9

.106

.114

A

2

.02

.25

.001

.010

b

1.15

1.45

.045

.057

b

2

1.9

2.1

.75

.83

C

.4

.65

.016

.026

D

13.80

14.00

.543

.551

E

15.85

16.05

.624

.632

E

1

13.3

13.6

.524

.535

e

5.45 BSC

.215 BSC

H

18.70

19.10

.736

.752

L

2.40

2.70

.094

.106

L1

1.20

1.40

.047

.055

L2

1.00

1.15

.039

.045

L3

0.25 BSC

.010 BSC

L4

3.80

4.10

.150

.161

Min. Recommended Footprint

IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:

4,835,592

4,881,106

5,017,508

5,049,961

5,187,117

5,486,715

4,850,072

4,931,844

5,034,796

5,063,307

5,237,481

5,381,025

Similar Part No. - IXGT30N60BD1

Manufacturer	Part #	Datasheet	Description
IXYS Corporation	IXGT30N60B2	583Kb / 5P	HiPerFAST IGBT
	IXGT30N60B2D1	606Kb / 6P	HiPerFAST IGBT
	IXGT30N60BU1	141Kb / 5P	HiPerFAST IGBT with Diode

More results

Similar Description - IXGT30N60BD1

Manufacturer	Part #	Datasheet	Description
IXYS Corporation	IXGK60N60C2D1	620Kb / 5P	HiPerFASTTM IGBT with Diode
	IXSH24N60U1	37Kb / 2P	HiPerFASTTM IGBT with Diode
	IXGX40N60BD1	99Kb / 2P	HiPerFASTTM IGBT with Diode
	IXGR32N90B2D1	205Kb / 7P	HiPerFASTTM IGBT with Fast Diode
	IXGH40N30BD1	108Kb / 4P	HiPerFASTTM IGBT
	IXGH30N60B	53Kb / 2P	HiPerFASTTM IGBT
	IXGH12N60B	34Kb / 2P	HiPerFASTTM IGBT
	IXGN50N60B	118Kb / 4P	HiPerFASTTM IGBT
	IXGN200N60B	67Kb / 2P	HiPerFASTTM IGBT
	IXGA20N60B	85Kb / 4P	HiPerFASTTM IGBT

More results

IXGT30N60BD1 Datasheet(PDF) 2 Page - IXYS Corporation

IXGT30N60BD1 Datasheet(HTML) 2 Page - IXYS Corporation

Similar Part No. - IXGT30N60BD1

Similar Description - IXGT30N60BD1

Html Pages

1 2 3 4 5

Datasheet Download

Link URL