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IXGT30N60BD1 Datasheet(PDF) 2 Page - IXYS Corporation |
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IXGT30N60BD1 Datasheet(HTML) 2 Page - IXYS Corporation |
2 / 5 page 2 - 5 © 2000 IXYS All rights reserved Symbol Test Conditions Characteristic Values (T J = 25°C, unless otherwise specified) min. typ. max. g fs I C = I C90; VCE = 10 V, 25 S Pulse test, t £ 300 ms, duty cycle £ 2 % C ies 2700 pF C oes V CE = 25 V, VGE = 0 V, f = 1 MHz 240 pF C res 50 pF Q g 110 nC Q ge I C = I C90, VGE = 15 V, VCE = 0.5 VCES 22 nC Q gc 40 nC t d(on) 25 ns t ri 30 ns t d(off) 130 220 ns t fi 100 190 ns E off 1.0 2.0 mJ t d(on) 25 ns t ri 35 ns E on 1.0 mJ t d(off) 200 ns t fi 230 ns E off 2.5 mJ R thJC 0.62 K/W R thCK (TO-247 AD) 0.25 K/W Reverse Diode (FRED) Characteristic Values (T J = 25°C, unless otherwise specified) Symbol Test Conditions min. typ. max. V F I F = I C90, VGE = 0 V, Pulse test T J = 150°C 1.6 V t £ 300 ms, duty cycle d £ 2 % 2.5 V I RM I F = I C90, VGE = 0 V, -diF/dt = 100 A/ms6 A t rr V R = 100 V T J =100°C 100 ns I F = 1 A; -di/dt = 100 A/ ms; V R = 30 V 25 ns R thJC 0.9 K/W Inductive load, T J = 25°C I C = IC90, VGE = 15 V, L = 100 mH, V CE = 0.8 VCES, RG = Roff = 4.7 W Remarks: Switching times may increase for V CE (Clamp) > 0.8 • VCES, higher T J or increased RG Inductive load, T J = 150°C I C = IC90, VGE = 15 V, L = 100 mH V CE = 0.8 VCES, RG = Roff = 4.7 W Remarks: Switching times may increase for V CE (Clamp) > 0.8 • VCES, higher T J or increased RG IXGH 30N60BD1 IXGT 30N60BD1 TO-247 AD (IXGH) Outline Dim. Millimeter Inches Min. Max. Min. Max. A 19.81 20.32 0.780 0.800 B 20.80 21.46 0.819 0.845 C 15.75 16.26 0.610 0.640 D 3.55 3.65 0.140 0.144 E 4.32 5.49 0.170 0.216 F 5.4 6.2 0.212 0.244 G 1.65 2.13 0.065 0.084 H - 4.5 - 0.177 J 1.0 1.4 0.040 0.055 K 10.8 11.0 0.426 0.433 L 4.7 5.3 0.185 0.209 M 0.4 0.8 0.016 0.031 N 1.5 2.49 0.087 0.102 TO-268AA (D3 PAK) Dim. Millimeter Inches Min. Max. Min. Max. A 4.9 5.1 .193 .201 A 1 2.7 2.9 .106 .114 A 2 .02 .25 .001 .010 b 1.15 1.45 .045 .057 b 2 1.9 2.1 .75 .83 C .4 .65 .016 .026 D 13.80 14.00 .543 .551 E 15.85 16.05 .624 .632 E 1 13.3 13.6 .524 .535 e 5.45 BSC .215 BSC H 18.70 19.10 .736 .752 L 2.40 2.70 .094 .106 L1 1.20 1.40 .047 .055 L2 1.00 1.15 .039 .045 L3 0.25 BSC .010 BSC L4 3.80 4.10 .150 .161 Min. Recommended Footprint IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 |
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