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IXFK73N30Q Datasheet(PDF) 1 Page - IXYS Corporation |
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IXFK73N30Q Datasheet(HTML) 1 Page - IXYS Corporation |
1 / 2 page © 2001 IXYS All rights reserved Symbol Test Conditions Maximum Ratings V DSS T J = 25 °C to 150°C 300 V V DGR T J = 25 °C to 150°C; R GS = 1 MΩ 300 V V GS Continuous ±20 V V GSM Transient ±30 V I D25 T C = 25 °C73 A I DM T C = 25 °C, pulse width limited by T JM 292 A I AR T C = 25 °C73 A E AR T C = 25 °C60 mJ E AS T C = 25 °C 2.5 J dv/dt I S ≤ I DM, di/dt ≤ 100 A/µs, VDD ≤ VDSS 5 V/ns T J ≤ 150°C, R G = 2 Ω P D T C = 25 °C 500 W T J -55 ... +150 °C T JM 150 ° C T stg -55 ... +150 ° C T L 1.6 mm (0.063 in.) from case for 10 s 300 ° C M d Mounting torque (TO-264) 0.4/6 Nm/lb.in. Weight PLUS 247 6 g TO-264 10 g Symbol Test Conditions Characteristic Values (T J = 25°C, unless otherwise specified) min. typ. max. V DSS V GS = 0 V, ID = 1mA 300 V V GS(th) V DS = VGS, ID = 4mA 2.0 4.0 V I GSS V GS = ±20 V, VDS = 0 ±100 nA I DSS V DS = V DSS 0.8 V DSS 100 µA V GS = 0 V T J = 125 °C2 mA R DS(on) V GS = 10 V, ID = 0.5 I D25 42 m Ω Note 1 98870 (12/01) G = Gate D = Drain S = Source TAB = Drain S G D (TAB) TO-264 AA (IXFK) IXFX 73N30Q V DSS = 300 V IXFK 73N30Q I D25 = 73 A R DS(on) = 42 m Ω Ω Ω Ω Ω t rr ≤ ≤≤≤≤ 250 µs Preliminary data sheet PLUS 247TM (IXFX) G D (TAB) HiPerFETTM Power MOSFETs Q-CLASS Single MOSFET Die N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dV/dt, Low t rr Features l IXYS advanced low Q g process l Low gate charge and capacitances - easier to drive - faster switching l International standard packages l Low R DS (on) l Rated for unclamped Inductive load switching (UIS) rated l Molding epoxies meet UL 94 V-0 flammability classification Applications l DC-DC converters l Battery chargers l Switched-mode and resonant-mode power supplies l DC choppers l AC motor control l Temperature and lighting controls Advantages l PLUS 247TM package for clip or spring mounting l Space savings l High power density |
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