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AS4C32M16MD1 Datasheet(PDF) 8 Page - Alliance Semiconductor Corporation

Part # AS4C32M16MD1
Description  Four internal banks for concurrent operation
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Manufacturer  ALSC [Alliance Semiconductor Corporation]
Direct Link  https://www.alliancememory.com
Logo ALSC - Alliance Semiconductor Corporation

AS4C32M16MD1 Datasheet(HTML) 8 Page - Alliance Semiconductor Corporation

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AS4C32M16MD1
Confidential
8
Rev. 2.0/February 2014
Table 2.2 Bank Select Signal
BA0
BA1
Bank 0
L
L
Bank 1
H
L
Bank 2
L
H
Bank 3
H
H
Note : H = VIH , L = VIL
CKE (input pin)
CKE controls power-down mode, self-refresh function and deep power-down function with other
command inputs. The CKE level must be kept for 2 clocks at least, that is, if CKE changes at the
cross point of the CK rising edge and the CK# falling edge with proper setup time tIS, by the next
CK rising edge CKE level must be kept with proper hold time tIH.
DQ0 to DQ15 (input/output pins)
Data are input to and output from these pins.
UDQS and LDQS (input and output pin)
DQS provides the read data strobes (as output) and the write data strobes (as input). Each DQS pin
corresponds to eight DQ pins, respectively (See Table 2.3).
UDM and LDM (input pin)
DM is the reference signals of the data input mask function. DM is sampled at the cross point of DQS
and VDDQ/2. When DM = high, the data input at the same timing are masked while the internal
burst counter will be counting up. Each DM pin corresponds to eight DQ pins, respectively (See Table
2.3).
Table 2.3 DQS and DM Correspondence
Organization
DQS
Data mask
DQs
x16 bits
LDQS
LDM
DQ0 to DQ7
UDQS
UDM
DQ8 to DQ15
VDD, VSS, VDDQ, VSSQ (Power supply)
VDD and VSS are power supply pins for internal circuits. VDDQ and VSSQ are power supply pins for
the output buffers. VDD must be equal to VDDQ.


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