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MDIS1903TH Datasheet(PDF) 3 Page - MagnaChip Semiconductor. |
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MDIS1903TH Datasheet(HTML) 3 Page - MagnaChip Semiconductor. |
3 / 6 page Jun 2011 Version 1.0 MagnaChip Semiconductor Ltd. 3 Fig.5 Transfer Characteristics Fig.1 On-Region Characteristics Fig.2 On-Resistance Variation with Drain Current and Gate Voltage Fig.3 On-Resistance Variation with Temperature Fig.4 On-Resistance Variation with Gate to Source Voltage Fig.6 Body Diode Forward Voltage Variation with Source Current and Temperature 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 0 5 10 15 20 25 30 8.0V 4.5V V GS = 10V 5.0V 4.0V 3.5V V DS, Drain-Source Voltage [V] 0 5 10 15 20 25 70 80 90 100 110 120 130 140 150 V GS = 10V V GS = 6.0V I D, Drain Current [A] -50 -25 0 25 50 75 100 125 150 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 ※ Notes : 1. V GS = 10 V 2. I D = 10.0 A T J, Junction Temperature [ oC] 2 3 4 5 6 7 8 9 10 0 50 100 150 200 250 300 ※ Notes : I D = 10.0A T J = 25 ℃ V GS, Gate to Source Volatge [V] 0 1 2 3 4 5 6 7 8 0 5 10 15 20 25 V GS, Gate-Source Voltage [V] T J=25 ℃ ※ Notes : V DS = 10V 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 10 0 10 1 T J=25 ℃ ※ Notes : V GS = 0V V SD, Source-Drain voltage [V] |
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