MDIS5N50TH datasheet(3/6 Pages) MGCHIP

Part #	MDIS5N50TH

Description	N-Channel MOSFET 500V, 4.4 A, 1.4(ohm)

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Manufacturer	MGCHIP [MagnaChip Semiconductor.]

Direct Link	http://www.magnachip.co.kr

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3 / 6 page

Jul.2012. Version1.0

MagnaChip Semiconductor Ltd

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3

Fig.5 Transfer Characteristics

Fig.1 On-Region Characteristics

Fig.2 On-Resistance Variation with

Drain Current and Gate Voltage

Fig.3 On-Resistance Variation with

Temperature

Fig.4 Breakdown Voltage Variation vs.

Temperature

Fig.6 Body Diode Forward Voltage

Variation with Source Current and

Temperature

0

5

10

15

20

25

1.0

1.1

1.2

1.3

1.4

1.5

1.6

1.7

1.8

1.9

2.0

2.1

2.2

2.3

2.4

V

GS=10.0V

V

GS=20V

I

D,Drain Current [A]

-50

-25

0

25

50

75

100

125

150

0.6

0.8

1.0

1.2

1.4

1.6

1.8

V

GS=10V

V

GS=4.5V

Notes :

※

1. V

GS = 10 V

2. I

D = 5 A

T

J, Junction Temperature [

oC]

4

5

6

7

8

1

10

25℃

℃

* Notes ;

1. V

DS=30V

150℃

℃

-55℃

℃

V

GS [V]

0.1

1

10

0.1

1

10

Notes

1. 250㎲

㎲

㎲ PulseTest

2. T

C=25

℃

V

gs=5.5V

=6.0V

=6.5V

=7.0V

=8.0V

=10.0V

V

DS,Drain-Source Voltage [V]

-50

0

50

100

150

200

0.8

0.9

1.0

1.1

1.2

Notes :

※

1. V

GS = 0 V

2. I

D

= 250㎂

T

J, Junction Temperature [

oC]

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1

10

100

Notes :

※

1. V

GS = 0 V

2. I

D

= 250㎂

V

SD, Source-Drain Voltage [V]

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