MDFS11N65B datasheet(2/6 Pages) MGCHIP

Part #	MDFS11N65B

Description	N-Channel MOSFET 650V, 12A, 0.65(ohm)

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Manufacturer	MGCHIP [MagnaChip Semiconductor.]

Direct Link	http://www.magnachip.co.kr

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2 / 6 page

Jul 2014 Version 1.1

MagnaChip Semiconductor Ltd.

2

Ordering Information

Part Number

Temp. Range

Package

Packing

RoHS Status

MDFS11N65BTH

-55~150

oC

TO-220FT

Tube

Halogen Free

Electrical Characteristics (Ta =25

oC)

Characteristics

Symbol

Test Condition

Min

Typ

Max

Unit

Static Characteristics

Drain-Source Breakdown Voltage

BVDSS

ID = 250μA, VGS = 0V

650

-

V

Gate Threshold Voltage

VGS(th)

VDS = VGS, ID = 250μA

2.0

-

4.0

Drain Cut-Off Current

IDSS

VDS = 650V, VGS = 0V

-

1

μA

Gate Leakage Current

IGSS

VGS = ±30V, VDS = 0V

-

100

nA

Drain-Source ON Resistance

RDS(ON)

VGS = 10V, ID = 6A

0.55

0.65

Ω

Forward Transconductance

gfs

VDS = 30V, ID = 6A

-

8.7

-

S

Dynamic Characteristics

Total Gate Charge

Qg

VDS = 520V, ID = 12.0A, VGS = 10V

-

31

-

nC

Gate-Source Charge

Qgs

-

9.2

-

Gate-Drain Charge

Qgd

-

12.6

-

Input Capacitance

Ciss

VDS = 25V, VGS = 0V, f = 1.0MHz

-

1650

-

pF

Reverse Transfer Capacitance

Crss

-

7.7

-

Output Capacitance

Coss

-

180

-

Turn-On Delay Time

td(on)

VGS = 10V, VDS = 325V, ID = 12.0A,

RG = 25Ω

-

27

-

ns

Rise Time

tr

-

52

-

Turn-Off Delay Time

td(off)

-

132

-

Fall Time

tf

-

48

-

Drain-Source Body Diode Characteristics

Maximum Continuous Drain to

Source Diode Forward Current

IS

-

12

-

A

Source-Drain Diode Forward Voltage

VSD

IS = 12.0A, VGS = 0V

-

1.4

V

Body Diode Reverse Recovery Time

trr

IF = 12.0A, di/dt = 100A/μs

-

355

-

ns

Body Diode Reverse Recovery Charge

Qrr

-

3.6

-

μC

Note :

1. Pulse width is based on RθJC & RθJA and the maximum allowed junction temperature of 150°C.

2. Pulse test: pulse width ≤300us, duty cycle≤2%, pulse width limited by junction temperature TJ(MAX)=150°C.

3.

ISD ≤12.0A, di/dt≤200A/us, VDD≤BVdss, Rg =25Ω, Starting TJ=25°C

4. L=9.62mH,

IAS=12.0A, VDD=50V, Rg =25Ω, Starting TJ=25°C,

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