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NTE102 Datasheet(PDF) 1 Page - NTE Electronics |
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NTE102 Datasheet(HTML) 1 Page - NTE Electronics |
1 / 2 page NTE102 (PNP) & NTE103 (NPN) Germanium Complementary Transistors Power Output, Driver Description: The NTE102 (PNP) and NTE103 (NPN) are Germanium complementary transistors designed for me- dium–speed saturated switching applications. Features: D Low Collector–Emitter Saturation Voltage: VCE(sat) = 200mV Max @ IC = 24mA D High Emitter–Base Breakdown Voltage: V(BR)EBO = 12V Min @ IE = 20µA Absolute Maximum Ratings: Collector–Base Voltage, VCBO 25V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Collector–Emitter Voltage, VCES 24V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Emitter–Base Voltage, VEBO 12V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Continuous Collector Current, IC 150mA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Emitter Current, IE 100mA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Total Device Dissipation (TA = +25°C), PD 150mW . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Derate Above +25 ° 2mW/ °C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Total Device Dissipation (TC = +25°C), PD 300mW . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Derate Above +25 ° 4mW/ °C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Operating Junction Temperature Range, TJ –65 ° to +100°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Storage Junction Temperature Range, Tstg –65 ° to +100°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Electrical Characteristics: (TA = +25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit OFF Characteristics Collector–Base Breakdown Voltage V(BR)CBO IC = 20µA, IE = 0 25 – – V Emitter–Base Breakdown Voltage V(BR)EBO IE = 20µA, IC = 0 12 – – V Punch–Through Voltage VPT VEBfl = 1V, Note 1 24 – – V Collector Cutoff Current ICBO VCB = 12V, IE = 0 – 0.8 5.0 µA VCB = 12V, IE = 0, TA = +80°C – 20 90 µA Emitter Cutoff Current IEBO VEB = 2.5V, IC = 0 – 0.5 2.5 µA Note 1. VPT is determined by measuring the Emitter–Base floating potential VEBfl, using a voltmeter with 11M Ω minimum input impedance. The Collector–Base Voltage, VCB, is increased until VEBfl = 1V; this value of VCB = (VPT + 1). |
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