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IRL830T Datasheet(PDF) 1 Page - List of Unclassifed Manufacturers |
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1 / 3 page Bay Linear, Inc 2478 Armstrong Street, Livermore, CA 94550 Tel: (925) 989-7144, Fax: (925) 940-9556 www.baylinear.com POWER MOSFET IRF830 Advance Information Ordering Information Device Package Temp. IRL830T TO-220 0 to 150 °C IRL830S TO-263 ( D 2 ) 0 to 150 °C Absolute Maximum Rating Parameter Max Unit ID@ TC =25 °°°°C Continuous Drain Current, VGS @10V 4.5 ID@ TC =100 °°°°C Continuous Drain Current, VGS @10V 2.9 IDM Pulsed Drain Current (1) 18 A PD @ TC =25 °°°°C Power Dissipation 74 W Linear Derating Factor 0.59 Linear Derating Factor ( PCB Mount, D 2 ) (1) 0.025 W/ °°°°C VGS Gate-to- Source Voltage ±20 V EAS Single Pulse Avalanche Energy (2) 280 mJ IAR Avalanche Current (1) 4.5 A EAR Repetitive Avalanche Energy (1) 7.4 mJ dv/dt Peak Diode Recovery dv/dt (3) 3.5 V/ns TJ, TSTG Junction & Storage Temperature Range −55 to +150 Soldering Temperature, for 10 seconds 300 (1.6mm from case) °°°°C Thermal Resistance Parameter Min Typ Max Units RθθθθJC Junction-to Case - - 1.7 RθθθθCS Case-to-Sink, Flat, Greased Surface ( TO-220) - 0.50 RθθθθJA Junction-to Ambient ( PCB Mount, D 2 ) 40 RθθθθJA Junction-to Ambient - - 62 °°°°C/W Description The Bay Linear MOSFET’s provide the designers with the best combination of fast switching, ruggedized device design, low 0n-resistance and low cost-effectiveness. The TO-220 is offered in a 3-pin is universally preferred for all commercial-industrial applications at power dissipation level to approximately to 50 watts. Also, available in a D 2 surface mount power package with a power dissipation up to 2 Watts Features • Dynamic dv/dt Rating • Repetitive Avalanche Rated • Fast Switching • Ease of Paralleling • Simple Drive Requirements VDSS = 500V RDS (ON) = 1.5 Ω ID = 4.5A Bay Linear Bay Linear Bay Linear Bay Linear Linear Excellence |
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