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TSE2004GB2C0NCG Datasheet(PDF) 11 Page - Integrated Device Technology

Part # TSE2004GB2C0NCG
Description  DDR4 Temperature Sensor with Integrated 4Kbit EEPROM for Memory Module
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Manufacturer  IDT [Integrated Device Technology]
Direct Link  http://www.idt.com
Logo IDT - Integrated Device Technology

TSE2004GB2C0NCG Datasheet(HTML) 11 Page - Integrated Device Technology

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©2017 Integrated Device Technology, Inc.
May 15, 2017
TSE2004GB2C0 Datasheet
The Device Select Code consists of a 4-bit Device Type Identifier, and a 3-bit Select Address. To address the EE memory array, the 4-bit
Device Type Identifier is 1010b; to access the write-protection settings or EE page address, it is 0110b; and to access the Temperature
Sensor settings is 0011b. Additionally, writing or clearing the reversible EE write protect requires SA0 be raised to the VHV voltage level.
Up to eight memory devices can be connected on a single I2C Bus. Each one is given a unique 3-bit Logical Serial Address code. The
LSA is a decoding of information on the SA pins SA0, SA1, and SA2 (Table 3). When the Device Select Code is received, the device only
responds if the Select Address is the same as the Logical Serial Address.
Write Protection commands SWPn, CWP, and RPSn, and the EE Page Address commands SPAn and RPA, do not use the Select
Address or Logical Serial Address, therefore, all devices on the I2C Bus will act on these commands simultaneously. Since it is
impossible to determine which device is responding to RPSn or RPA commands, for example, these functions are primarily used for
external device programmers rather than in-system applications.
The eighth bit is the Read/Write bit (R/W_n). This bit is set to 1 for Read, and 0 for Write operations.
If a match occurs on the Device Select code, the corresponding device gives an acknowledgment on Serial Data (SDA) during the ninth
bit time. If the device does not match the EE Device Select code, the EE section deselects itself from the bus, and switches into Standby
mode. The I2C Bus operating modes are shown in Table 4.


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