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AMT49413GEVATR Datasheet(PDF) 4 Page - Allegro MicroSystems |
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AMT49413GEVATR Datasheet(HTML) 4 Page - Allegro MicroSystems |
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4 / 21 page  3-Phase BLDC Controller and MOSFET Driver AMT49413 4 Allegro MicroSystems, LLC 115 Northeast Cutoff Worcester, Massachusetts 01615-0036 U.S.A. 1.508.853.5000; www.allegromicro.com ELECTRICAL CHARACTERISTICS: Valid at TA = 25°C, VBB = 7 to 45 V, unless otherwise noted Characteristics Symbol Test Conditions Min. Typ. Max. Units SUPPLY AND REFERENCE VBB Functional Operating Range1 VBB Function correct, parameters not guaranteed 5.5 – 50 V VBB Quiescent Current IBBQ RESET = High, outputs = Low – 11 14 mA IBBS RESET = Low, sleep mode – – 10 µA V5 Quiescent Current IV5Q RESET = High, outputs = Low – – 5 mA VREG Output Voltage VREG VBB ≥ 7.4 V, IREG = 0 to 15 mA 12.10 13 13.75 V 6 V < VBB < 7.4 V IREG = 0 to 15 mA 2×VBB –2.7 – – V 5.5 V < VBB < 6 V, IREG < 10 mA 9 10 – V Bootstrap Diode Forward Voltage VfBOOT ID = 10 mA 0.4 0.7 1.0 V ID = 100 mA 1.5 2.2 2.8 V Bootstrap Diode Resistance rD rD(100 mA)=(VfBOOT(150 mA)– VfBOOT(50mA)) /100 mA 6 10 20 Ω Bootstrap Diode Current Limit IDBOOT 250 500 750 mA Top-Off Charge Pump Current Limit ITOCPM – 200 – µA High-Side Gate Drive Static Load Resistance RGSH 250 – – kΩ V5 Output Voltage V5 4.75 5 5.25 V VBE of External Transistor QV5 VBEEXT – – 1 V V5BD Base Drive Capability for QV52 I5BD – – –2 mA GATE OUTPUT DRIVE Turn-On Rise Time tr CLOAD = 3300 pF, 20% to 80% points – 60 – ns Turn-Off Fall Time tf CLOAD = 3300 pF, 80% to 20% points – 40 – ns Pull-Up On Resistance RDS(on)UP IGHx= –150 mA 3 4 5 Ω Pull-Down On Resistance RDS(on)DN IGLx=150 mA 1 1.5 2 Ω Short-Circuit Current – Source2 ISC(source) – –500 – mA Short-Circuit Current – Sink ISC(sink) – 850 – mA GHx Output Voltage VGHx tw < 10 µs Bootstrap capacitor fully charged VCx– 0.2 – – V GLx Output Voltage VGLx VREG–0.2 – – V Turn-Off Propagation Delay tp(off) From Hall input change to unloaded gate output change 300 500 700 ns From other control input change to unloaded gate output change – 150 200 ns Dead Time (turn-off to turn-on delay) tDEAD RDEAD = 5 kΩ – 180 – ns RDEAD = 50 kΩ 835 960 1090 ns RDEAD = 400 kΩ – 3.3 – µs RDEAD = tied to V5 – 6 – µs Continued on the next page... |
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