2

Symbol

Parameter

Unit

Absolute Maximum

Supply Current

mA

18.0

Control Current

mA

33.4

RF Input Power

dBm

27dBm CW, 36dBm with

12.5% duty cycle

Total Power Dissipation

W

0.3

Junction Temperature

°C

150

Storage Temperature

°C

-60 to 150

(Vc = 1V, Vsupply = 2.7V, Tc = 85°C)

Notes:

1. Operation in excess of any one of these

limits may result in permanent damage to the

device.

2. Thermal resistance is measured from junction

to case using Infra-Red method.

Symbol

Parameter and Test Condition

Frequency (MHz)

Unit

Min

Typ

Max

mA

–

2.5

–

mA

–

20.5

–

S21

900

dB

–

42.0

–

S21

1900

dB

36.0

39.0

–

S21

900

dB

–

2.8

–

S21

1900

dB

–

3.2

3.7

Dynamic Range

900

dB

–

38

–

Dynamic Range

1900

dB

33

36.5

–

IRL

1900

dB

10

14.5

–

ORL

1900

dB

10

13.5

–

Input Third Order Intercept Point

900

dBm

–

50

–

Input Third Order Intercept Point

1900

dBm

–

50

–

900

dBm

–

32

–

1900

dBm

–

33

–

1900

degrees

–

10.5

–

Notes:

4. Data above is obtained using demo board shown in Figure 32 and 33.

6. IP1dB measured with 12.5% duty cycle.

7. The performance above obtained with phase compensation inductor value based on the table 1 below.

8. Use proper biasing, heat sink and de-rating to ensure maximum channel temperature is not exceeded. See absolute maximum ratings and

application note (if applicable) for more details.