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GLT725608-20TC Datasheet(PDF) 3 Page - List of Unclassifed Manufacturers |
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3 / 12 page G -LINK GLT725608 Ultra High Performance 32K x 8 Bit CMOS STATIC RAM Feb, 2001(Rev.2.4) G-Link Technology 2701 Northwestern Parkway Santa Clara, CA 95051, U.S.A. G-Link Technology Corporation, Taiwan 6F, No. 24-2, Industry E, RD, IV, Science Based Industrial Park, Hsin Chu, Taiwan. - 3 - DC Characteristics Sym. Parameter Test Conditions Min. Typ (1) Max. Unit VIL Guaranteed Input Low Voltage (2) -0.3 - +0.8 V VIH Guaranteed Input High Voltage (2) 2.2 - VCC+0.3 V ILI Input Leakage Current VCC= Max., VIN=0V to VCC -5 - 5 µA ILO Output Leakage Current VCC= Max., CE ≥V IH -5 - 5 µA VOL Output Low Voltage VCC= Min., IOL =8mA - - 0.4 V VOH Output High Voltage VCC= Min., IOH =-4mA 2.4 - - V ICC Operating Power Supply Current VCC= Max., CE ≤V IL, II/O=0mA., F= Fmax (3) - - -12 -15 -20 160 150 120 mA ICCSB Standby Power Supply Current VCC= Max., CE ≥V IH, II/O=0mA., F= Fmax (3) - - 40 30 20 mA ICCSB1 Power Down Power Supply Current VCC= Max., CE ≥V CC.-0.2V, VIN ≥V CC. -0.2V or - - 10 10 10 mA 1. Typical characteristics are at VCC=5V, TA=25 2. These are absolute values with reject to device ground and all overshoots due to system or tester noise are included. 3. FMAX=1/tRC. Data Retention Sym. Parameter Test Conditions Min. Typ (1) Max. Unit VDR VCC for Data retention CE ≥ V CC -0.2V, VIN ≥ V CC -0.2V or VIN ≤ 0.2V 2.0 - 5.5 V ICCDR (1) Data Retention Current VDR=2.0V - 30 µA VDR=3.0V 50 µA tCDR Chip Deselect to Data Retention Time See Retention Waveform 0 - - ns tR Operating Recovery Time tRC (2) - - ns 1. CE ≥ V DR -0.2V, VIN ≥ V DR -0.2V or VIN ≤ 0.2V. 2. tRC =Read Cycle Time. |
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