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MDD9N40RH Datasheet(PDF) 3 Page - MagnaChip Semiconductor. |
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MDD9N40RH Datasheet(HTML) 3 Page - MagnaChip Semiconductor. |
3 / 6 page Oct. 2012 Version 1.0 MagnaChip Semiconductor Ltd . 3 Fig.5 Transfer Characteristics Fig.1 On-Region Characteristics Fig.2 On-Resistance Variation with Drain Current and Gate Voltage Fig.3 On-Resistance Variation with Temperature Fig.4 Breakdown Voltage Variation vs. Temperature Fig.6 Body Diode Forward Voltage Variation with Source Current and Temperature -50 0 50 100 150 0.8 0.9 1.0 1.1 1.2 Notes : ※ 1. V GS = 0 V 2. I D = 250㎂ T J, Junction Temperature [ oC] 0 5 10 15 0.0 0.5 1.0 1.5 2.0 2.5 V GS=10.0V V GS=20V I D,Drain Current [A] 0.2 0.4 0.6 0.8 1.0 1.2 0.1 1 10 25℃ 150℃ Notes : ※ 1. V GS = 0 V 2.250µs Pulse test V SD, Source-Drain Voltage [V] -50 0 50 100 150 0.0 0.5 1.0 1.5 2.0 2.5 3.0 Notes : ※ ※ ※ ※ 1. V GS = 10 V 2. I D = 3.0A T J, Junction Temperature [ oC] 4 6 8 10 0.1 1 10 -55℃ 25℃ 150℃ * Notes ; 1. Vds=30V V GS [V] 0 5 10 15 20 0 5 10 15 Notes 1. 250㎲ ㎲ ㎲ ㎲ PulseTest 2. T C=25 ℃ ℃ ℃ ℃ V gs=5.5V =6.0V =6.5V =7.0V =8.0V =10.0V =15.0V V DS,Drain-Source Voltage [V] |
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