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MDD3N40 Datasheet(PDF) 4 Page - MagnaChip Semiconductor. |
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MDD3N40 Datasheet(HTML) 4 Page - MagnaChip Semiconductor. |
4 / 7 page Feb. 2014 Version 1.2 MagnaChip Semiconductor Ltd. 4 Fig.7 Gate Charge Characteristics Fig.8 Capacitance Characteristics Fig.9 Maximum Safe Operating Area Fig.10 Maximum Drain Current vs. Case Temperature Fig.11 Transient Thermal Response Curve Fig.12 Single Pulse Maximum Power Dissipation 10 -1 10 0 10 1 10 2 10 -2 10 -1 10 0 10 1 1s 10s 100 s 100 ms DC 10 ms 1 ms Operation in This Area is Limited by R DS(on) Single Pulse T J=Max rated T C=25 ℃ V DS, Drain-Source Voltage [V] 1E-5 1E-4 1E-3 0.01 0.1 1 10 0 2000 4000 single Pulse T C = 25 ℃ Pulse Width (s) 25 50 75 100 125 150 0.0 0.5 1.0 1.5 2.0 T C, Case Temperature [ ℃] 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 2 10 3 10 -2 10 -1 10 0 10 1 ※ Notes : Duty Factor, D=t 1/t2 PEAK T J = PDM * Z θ JC* Rθ JC(t) + TC R Θ JA=60℃/W single pulse D=0.5 0.02 0.2 0.05 0.1 0.01 t 1, Rectangular Pulse Duration [sec] 0 2 4 6 0 2 4 6 8 10 80V 200V 320V ※ Note : I D = 3A Q G, Total Gate Charge [nC] 1 10 0 100 200 300 C iss = Cgs + Cgd (Cds = shorted) C oss = Cds + Cgd C rss = Cgd ※ Notes ; 1. V GS = 0 V 2. f = 1 MHz C rss C oss C iss V DS, Drain-Source Voltage [V] |
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