MDD3N40 datasheet(4/7 Pages) MGCHIP

Part #	MDD3N40

Description	N-Channel MOSFET 400V, 2.0A, 3.4(ohm)

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Manufacturer	MGCHIP [MagnaChip Semiconductor.]

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4 / 7 page

Feb. 2014 Version 1.2

MagnaChip Semiconductor Ltd.

4

Fig.7 Gate Charge Characteristics

Fig.8 Capacitance Characteristics

Fig.9 Maximum Safe Operating Area

Fig.10 Maximum Drain Current vs. Case

Temperature

Fig.11 Transient Thermal Response Curve

Fig.12 Single Pulse Maximum Power

Dissipation

10

-1

10

0

10

1

10

2

10

-2

10

-1

10

0

10

1

1s

10s

100 s

100 ms

DC

10 ms

1 ms

Operation in This Area

is Limited by R

DS(on)

Single Pulse

T

J=Max rated

T

C=25

℃

V

DS, Drain-Source Voltage [V]

1E-5

1E-4

1E-3

0.01

0.1

1

10

0

2000

4000

single Pulse

T

C = 25

℃

Pulse Width (s)

25

50

75

100

125

150

0.0

0.5

1.0

1.5

2.0

T

C, Case Temperature [

℃]

10

-5

10

-4

10

-3

10

-2

10

-1

10

0

10

1

10

2

10

3

10

-2

10

-1

10

0

10

1

※ Notes :

Duty Factor, D=t

1/t2

PEAK T

J = PDM * Z

θ JC* Rθ JC(t) + TC

R

Θ JA=60℃/W

single pulse

D=0.5

0.02

0.2

0.05

0.1

0.01

t

1, Rectangular Pulse Duration [sec]

0

2

4

6

0

2

4

6

8

10

80V

200V

320V

※ Note : I

D = 3A

Q

G, Total Gate Charge [nC]

1

10

0

100

200

300

C

iss = Cgs + Cgd (Cds = shorted)

C

oss = Cds + Cgd

C

rss = Cgd

※ Notes ;

1. V

GS = 0 V

2. f = 1 MHz

C

rss

C

oss

C

iss

V

DS, Drain-Source Voltage [V]

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