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ISO7740-Q1, ISO7741-Q1, ISO7742-Q1

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SLLSEU0A – NOVEMBER 2016 – REVISED MAY 2017

Product Folder Links: ISO7740-Q1 ISO7741-Q1 ISO7742-Q1

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Copyright © 2016–2017, Texas Instruments Incorporated

(1)

Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings

only and functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating

Conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

(2)

All voltage values except differential I/O bus voltages are with respect to the local ground terminal (GND1 or GND2) and are peak

voltage values.

(3)

Maximum voltage must not exceed 6 V.

6 Specifications

6.1 Absolute Maximum Ratings

See

(1)

MIN

MAX

UNIT

–0.5

6

V

V

Voltage at INx, OUTx, ENx

–0.5

(3)

V

Output current

–15

15

mA

Junction temperature

150

°C

Storage temperature

–65

150

°C

(1)

AEC Q100-002 indicates that HBM stressing shall be in accordance with the ANSI/ESDA/JEDEC JS-001 specification.

6.2 ESD Ratings

VALUE

UNIT

Electrostatic discharge

±6000

V

Charged-device model (CDM), per AEC Q100-011

±1500

(1)

6.3 Recommended Operating Conditions

MIN

NOM

MAX

UNIT

Supply voltage

2.25

5.5

V

UVLO threshold when supply voltage is rising

2

2.25

V

UVLO threshold when supply voltage is falling

1.7

1.8

V

Supply voltage UVLO hysteresis

100

200

mV

High-level output current

–4

mA

–2

–1

Low-level output current

4

mA

2

1

High-level input voltage

(1)

V

Low-level input voltage

0

V

DR

Data rate

0

100

Mbps

Ambient temperature

-40

25

125

°C