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TPS2552DRVT Datasheet(PDF) 6 Page - Texas Instruments |
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TPS2552DRVT Datasheet(HTML) 6 Page - Texas Instruments |
6 / 38 page 6 TPS2552, TPS2553, TPS2552-1, TPS2553-1 SLVS841F – NOVEMBER 2008 – REVISED AUGUST 2016 www.ti.com Product Folder Links: TPS2552 TPS2553 TPS2552-1 TPS2553-1 Submit Documentation Feedback Copyright © 2008–2016, Texas Instruments Incorporated (1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process. (2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process. (3) Surges per EN61000-4-2. 1999 applied to output terminals of EVM. These are passing test levels, not failure threshold. 7.2 ESD Ratings VALUE UNIT V(ESD) Electrostatic discharge Human body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) ±2000 V Charged device model (CDM), per JEDEC specification JESD22- C101(2) ±500 IEC 61000-4-2 contact discharge(3) ±8000 IEC 61000-4-2 air-gap discharge(3) ±15000 (1) See Power Dissipation and Junction Temperature for details on how to calculate maximum junction temperature for specific applications and packages. 7.3 Recommended Operating Conditions over operating free-air temperature range (unless otherwise noted) MIN NOM MAX UNIT VIN Input voltage, IN 2.5 6.5 V VEN Enable voltage TPS2552/52-1 0 6.5 V VEN Enable voltage TPS2553/53-1 0 6.5 V VIH High-level input voltage on EN or EN 1.1 V VIL Low-level input voltage on EN or EN 0.66 IOUT Continuous output current, OUT –40 °C ≤ TJ ≤ 125 °C 0 1.2 A –40 °C ≤ TJ ≤ 105 °C 0 1.5 RILIM Current-limit threshold resistor range (nominal 1%) from ILIM to GND 15 232 kΩ IO Continuous FAULT sink current 0 10 mA Input de-coupling capacitance, IN to GND 0.1 µF TJ Operating virtual junction temperature(1) IOUT ≤ 1.2 A –40 125 °C IOUT ≤ 1.5 A –40 105 (1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report. 7.4 Thermal Information THERMAL METRIC(1) TPS2552 TPS2553 UNIT DBV (SOT-23) DRV (WSON) DBV (SOT-23) DRV (WSON) 6 PINS 6 PINS 6 PINS 6 PINS RθJA Junction-to-ambient thermal resistance 182.6 72 182.6 72 °C/W RθJC(to p) Junction-to-case (top) thermal resistance 122.2 85.3 122.2 85.3 °C/W RθJB Junction-to-board thermal resistance 29.4 41.3 29.4 41.3 °C/W ψJT Junction-to-top characterization parameter 20.8 1.7 20.8 1.7 °C/W ψJB Junction-to-board characterization parameter 28.9 41.7 28.9 41.7 °C/W RθJC(b ot) Junction-to-case (bottom) thermal resistance — 11.1 — 11.1 °C/W |
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