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TPD2S300 Datasheet(PDF) 5 Page - Texas Instruments |
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TPD2S300 Datasheet(HTML) 5 Page - Texas Instruments |
5 / 37 page 5 TPD2S300 www.ti.com SLVSDL1 – APRIL 2017 Product Folder Links: TPD2S300 Submit Documentation Feedback Copyright © 2017, Texas Instruments Incorporated (1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report. 6.5 Thermal Information THERMAL METRIC(1) TPD2S300 UNIT YFF (WCSP) 9 PINS RθJA Junction-to-ambient thermal resistance 107.5 °C/W RθJC(top) Junction-to-case (top) thermal resistance 0.9 °C/W RθJB Junction-to-board thermal resistance 28.1 °C/W ψJT Junction-to-top characterization parameter 0.5 °C/W ψJB Junction-to-board characterization parameter 28.2 °C/W RθJC(bot) Junction-to-case (bottom) thermal resistance N/A °C/W 6.6 Electrical Characteristics over operating free-air temperature range (unless otherwise noted) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT CC OVP SWITCHES RON_VCONN_ 1 On resistance of CC OVP FETs VCONN operation VM = 8.7 V, CCx = 3 V, ICCx = 0.6 A, –40°C ≤ TJ ≤ 105°C 0.560 Ω RON_VCONN_ 2 On resistance of CC OVP FETs VCONN operation VM = 8.7 V, CCx = 4.87 V, ICCx = 0.2 A, –40°C ≤ TJ ≤ 105°C 0.608 Ω RON_FRS On resistance of CC OVP FETs fast role swap operation VM = 2.7 V, CCx = 0.49 V, ICCx = 30 mA, –40°C ≤ TJ ≤ 105°C 1.3 Ω RON_CC_ANA On resistance of CC OVP FETs CC analog operation VM = 2.7 V, CCx = 2.45 V, ICCx = 400 µA, –40°C ≤ TJ ≤ 105°C 18.7 Ω RON_PD On resistance of CC OVP FETs CC USB-PD operation VM = 2.7 V, CCx = 1.2 V, ICCx = 250 µA, –20°C ≤ TJ ≤ 105°C 13 Ω RONFLAT_VC ONN_1 On resistance flatness of CC OVP FETs VCONN operation VM = 8.7 V, sweep CCx from 0 V to 5.5 V, measure the difference in resistance. ICCx = 0.2 A, –40°C ≤ TJ ≤ 105°C 0.2 Ω CON_CC Equivalent on capacitance for CC pins Capacitance from C_CCx or CCx to GND when device is powered. VC_CCx/VCCx = 0 V to 1.2 V, f = 400 kHz, –40°C ≤ TJ ≤ 105°C 30 120 pF VTH_DB Threshold voltage of the pull-down FET in series with RD during dead battery I_C_CCx = 80 uA 0.5 0.9 1.2 V RD Dead battery pull-down resistance (only present when device is unpowered). Effective resistance of RD and FET in series VPWR = 0 V, VC_CCx = 2.6 V 4.1 5.1 6.1 kΩ VOVPCC_RISE Rising overvoltage protection threshold on C_CCx pins Place 5.5 V on C_CCx pins. Step up voltage until the FLT pin is asserted .–20°C ≤ TJ ≤ 105°C 5.55 6.18 V VOVPCC_HYS OVP threshold hysteresis Place 6.5 V on C_CCx. Step down the voltage on C_CCx until the FLT pin is deasserted. Measure the difference between rising and falling OVP thresholds 50 mV BWON On bandwidth single ended (–3dB) Measure the –3-dB bandwidth from C_CCx to CCx. Single ended measurement, 50-Ω system. Vcm = 0 V to 1.2 V 80 MHz VSTBUS_CC Short-to-VBUS tolerance on the C_CCx pins Hot-Plug C_CCx with a 1 meter USB Type C Cable. Place a 30-Ω load on CCx 24 V |
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