3

Figure 5. Gain at 900MHz; LSL=15.5dB, Nominal =17.0dB, USL=18.5dB,

CPK = 6.858

Stdev = 0.0729

Notes:

1. Distribution data sample size is 500 samples taken from 2 different wafer lots and 3 different wafers. Future wafers allocated to this product may

have nominal values anywhere between the upper and lower limits.

2. Measurements were made on a characterization test board, which represents a trade-off between optimal OIP3, gain, P1dB and PAE. Circuit trace

losses have not been de-embedded from measurements above.

Figure 3. P1dB at 900MHz; LSL, 26.2dBm, nominal=27.7dBm

Figure 1. Ids at 900MHz; LSL=165mA, nominal =202.8mA, USL=240mA

CPK = 2.209

Stdev = 5.612

CPK = 1.645

stdev = 0.628

CPK = 27.78

Stdev = 0.018

stdev =0.187

Figure 2. OIP3 at 900MHz; LSL=41dB, nominal=44.1dBm

Figure 4. PAE at P1dB 900MHz; nominal=47.0%