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TMS427409A Datasheet(PDF) 11 Page - National Semiconductor (TI)

[Old version datasheet] Texas Instruments acquired National semiconductor.
Part # TMS427409A
Description  4194304 BY 4-BIT EXTENDED DATA OUT DYNAMIC RANDOM-ACCESS MEMORIES
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Manufacturer  NSC [National Semiconductor (TI)]
Direct Link  http://www.national.com
Logo NSC - National Semiconductor (TI)

TMS427409A Datasheet(HTML) 11 Page - National Semiconductor (TI)

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TMS416409A, TMS417409A, TMS426409A, TMS427409A
4194304 BY 4-BIT EXTENDED DATA OUT
DYNAMIC RANDOM-ACCESS MEMORIES
SMKS893B – AUGUST 1996 – REVISED APRIL 1997
11
POST OFFICE BOX 1443
HOUSTON, TEXAS 77251–1443
electrical characteristics over recommended ranges of supply voltage and operating free-air
temperature (unless otherwise noted) (continued)
TMS426409A
PARAMETER
TEST CONDITIONS†
’426409A - 50
’426409A -60
’426409A - 70
UNIT
PARAMETER
TEST CONDITIONS†
MIN
MAX
MIN
MAX
MIN
MAX
UNIT
VOH
High-level
output
IOH = – 2 mA
LVTTL
2.4
2.4
2.4
V
VOH
output
voltage
IOH = – 100 µA
LVCMOS
VCC – 0.2
VCC – 0.2
VCC – 0.2
V
VOL
Low-level
output
IOL = 2 mA
LVTTL
0.4
0.4
0.4
V
VOL
output
voltage
IOL = 100 µA
LVCMOS
0.2
0.2
0.2
V
II
Input current
(leakage)
VCC = 3.6 V,
VI = 0 V to 3.9 V,
All others = 0 V to VCC
± 10
± 10
± 10
µA
IO
Output
current
(leakage)
VCC = 3.6 V,
VO = 0 V to VCC,
CAS high
± 10
± 10
± 10
µA
ICC1‡§
Average
read- or
write- cycle
current
VCC = 3.6 V,
Minimum cycle
90
70
60
mA
ICC2
Average
standby
VIH = 2 V (LVTTL)
After one memory cycle, RAS and CAS
high
2
2
2
mA
ICC2
standby
current
VIH = VCC – 0.2 V (LVCMOS),
After one memory cycle, RAS and CAS
high
1
1
1
mA
ICC3‡§
Average
refresh
current
(RAS-only
refresh
or CBR)
VCC = 3.6 V,
Minimum cycle,
RAS cycling,
CAS high (RAS-only refresh),
RAS low after CAS low (CBR)
90
70
60
mA
ICC4‡¶
Average
EDO current
VCC = 3.6 V,
tHPC = MIN,
RAS low,
CAS cycling
100
90
80
mA
† For conditions shown as MIN / MAX, use the appropriate value specified in the timing requirements.
‡ Measured with outputs open
§ Measured with a maximum of one address change while RAS = VIL
¶ Measured with a maximum of one address change during each EDO cycle, tHPC


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