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V2AF114A150Y3ERP Datasheet(PDF) 4 Page - AVX Corporation |
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V2AF114A150Y3ERP Datasheet(HTML) 4 Page - AVX Corporation |
4 / 5 page 93 080216 Discrete MLV Model Where: Rv = Voltage Variable resistance (per VI curve) Rp ≥10 12 Ω C = defined by voltage rating and energy level Ron = turn on resistance Lp = parallel body inductance Discrete MLVF Model Where: Rv = Voltage Variable resistance (per VI curve) Rp = Body IR C = defined by voltage rating and energy level Ron = turn on resistance Lp = minimized parallel body inductance Ls = series body inductance LS LS RV C RP Ron LP To Device Requiring Protection Solder Pad Solder Pad Solder Pad PCB Trace To Device Requiring Protection RV C RP Ron LP Solder Pad TransFeed Automotive Series AVX Multilayer Ceramic Transient Voltage Suppressors TVS Protection and EMI Attenuation in a Single Chip PERFORMANCE CHARACTERISTICS AVX Multilayer Feedthru Varistors (MLVF) are an ideal choice for system designers with transient strike and broadband EMI/RFI concerns. Feedthru Varistors utilize a ZnO varistor material and the electrode pattern of a feedthru capacitor. This combination allows the package advantage of the feedthru and material advantages of the ZnO dielectric to be optimized. ZnO MLV Feedthrus exhibit electrical and physical advantages over standard ZnO MLVs. Among them are: 1. Faster Turn on Time 2. Broadband EMI attenuation 3. Small size (relative to discrete MLV and EMI filter schemes) The electrical model for a ZnO MLV and a ZnO Feedthru MLV are shown below. The key difference in the model for the Feedthru is a transformation in parallel to series induc- tance. The added series inductance helps lower the injected transient peak current (by 2πfL) resulting in an additional ben- efit of a lower clamping voltage. The lowered parallel induc- tance decreases the turn on time for the varistor to <250ps. FEEDTHRU VARISTORS |
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