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MBR1650 Datasheet(PDF) 1 Page - Sirectifier Semiconductors |
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MBR1650 Datasheet(HTML) 1 Page - Sirectifier Semiconductors |
1 / 2 page MBR1650 thru MBR1660 Symbol Characteristics I(AV) Maximum Average Forward Rectified Current @TC=125 C IFSM Maximum Ratings 16 150 A A Unit o IR Maximum DC Reverse Current At Rated DC Blocking Voltage @TJ=25 C @TJ=125 C CJ Typical Junction Capacitance (Note 2) TJ Operating Temperature Range 1 50 3 450 -55 to +150 -55 to +175 mA pF o o Typical Thermal Resistance (Note 1) ROJC C/W o C o High Tjm Low IRRM Schottky Barrier Diodes Dim. A B C D E F G H J K L M N Q Milimeter Min. Max. 12.70 14.73 14.23 16.51 9.66 10.66 3.54 4.08 5.85 6.85 2.54 3.42 1.15 1.77 - 6.35 0.64 0.89 4.83 5.33 3.56 4.82 0.38 0.56 2.04 2.49 0.64 1.39 Inches Min. Max. 0.500 0.580 0.560 0.650 0.380 0.420 0.139 0.161 2.300 0.420 0.100 0.135 0.045 0.070 - 0.250 0.025 0.035 0.190 0.210 0.140 0.190 0.015 0.022 0.080 0.115 0.025 0.055 Dimensions TO-220AC Peak Forward Surge Current 8.3ms Single Half-Sine-Wave Superimposed On Rated Load (JEDEC METHOD) dv/dt Voltage Rate Of Change (Rated VR) 1000 V/us C o TSTG Storage Temperature Range FEATURES * Metal of silicon rectifier, majority carrier conducton * Guard ring for transient protection * Low power loss, high efficiency * High current capability, low VF * High surge capacity * For use in low voltage, high frequency inverters, free whelling, and polarity protection applications MECHANICAL DATA * Case: TO-220AC molded plastic * Polarity: As marked on the body * Weight: 2 grams * Mounting position: Any VF Maximum Forward Voltage IF=16A @TJ=25 C IF=16A @TJ=125 C o o 0.75 0.65 V MBR1650 MBR1660 VRRM V 50 60 VRMS V 35 42 VDC V 50 60 A=Anode, C=Cathode, TAB=Cathode C A NOTES: 1. 300us Pulse Width, 2% Duty Cycle. 2. Thermal Resistance Junction To Case. 3. Measured At 1.0MHz And Applied Reverse Voltage Of 4.0V DC. C(TAB) C A * RoHS compliant P1 ©2008 SIRECTIFIER All rights reserved, Tel: +86-519-86800000 Fax: +86-519-88019019 E-mail: sales@sirectifier.com www.sirectifier.com |
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