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MBR30150PT Datasheet(PDF) 2 Page - Sirectifier Semiconductors |
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MBR30150PT Datasheet(HTML) 2 Page - Sirectifier Semiconductors |
2 / 3 page MBR30100PT thru MBR30200PT High Tjm Low IRRM Schottky Barrier Diodes 0.1 10 0 1 2 2.5 FORWARD VOLTAGE DROP, VFM(V) Figure 1. Max. Forward Voltage Drop Characteristics (PerLeg) 1.5 0.5 100 1000 TJ=25¢J TJ=125¢J TJ=175¢J 1 100 1000 0 40 80 REVERSE VOLTAGE, VR(V) Figure 3. Typical Junction Capacitance Vs. Reverse Voltage (Per Leg) 60 20 TJ=25¢J 100 Figure 2. Typical Values Of Reverse Current Vs. Reverse Voltage (Per Leg) 0 40 80 60 20 100 0.0001 REVERSE VOLTAGE, VR(V) 0.001 0.01 0.1 1 10 100 TJ=175¢J TJ=150¢J TJ=125¢J TJ=100¢J TJ=25¢J TJ=50¢J TJ=75¢J 0.001 0.0000 1 0.01 t1, RECTANGULAR PULSE DURATION (SECONDS) Figure 4. Max. Thermal Impedance ZthJC Characteristics (PerLeg) SINGLE PULSE (THERMAL RESISTANCE) 0.1 1 10 0.0001 0.001 0.01 0.1 1 10 100 D = 0.50 D = 0.33 D = 0.25 D = 0.17 D = 0.08 Notes: 1.Duty factor D = t1 / t2 2.Peak Tj = PDM x ZthJC + TC PDM t2 t1 P2 ©2008 SIRECTIFIER All rights reserved, Tel: +86-519-86800000 Fax: +86-519-88019019 E-mail: sales@sirectifier.com www.sirectifier.com |
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