EFC6602R

www.onsemi.com

3

Test circuits are example of measuring FET1 side

When FET2 is measured, the position of FET1 and FET2 is switched.

G2

G1

S1

S2

A

G2

G1

S1

S2

A

G2

G1

S1

S2

A

G2

G1

S1

S2

A

G2

G1

S1

S2

V

IS

Test Circuit 1

V(BR)SSS / ISSS

Test Circuit 2

IGSS

Test Circuit 3

VGS(th)

Test Circuit 4

gFS

Test Circuit 5

RSS(on)

VGS

VGS

VGS

VGS

When FET1 is measured,

Gate and Source of FET2

are short-circuited.

When FET1 is measured,

Gate and Source of FET2

are short-circuited.

When FET1 is measured,

Gate and Source of FET2

are short-circuited.

VSS

VSS

VSS

G2

G1

S1

S2

PG

RL

A

Test Circuit 7

Qg

IG =1mA

VSS

When FET1 is measured,

Gate and Source of FET2

are short-circuited.

G2

G1

S1

S2

V

PG

RL

Test Circuit 6

td(on), tr, td(off), tf

VSS

When FET1 is measured,

Gate and Source of FET2

are short-circuited.

G2

G1

S1

S2

V

IS

VGS=0V

Test Circuit 8

VF(S-S)

When FET1 is

measured,+4.5V is added to