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ECH8697R-TL-W Datasheet(PDF) 2 Page - ON Semiconductor |
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ECH8697R-TL-W Datasheet(HTML) 2 Page - ON Semiconductor |
2 / 5 page ECH8697R www.onsemi.com 2 ELECTRICAL CHARACTERISTICS at Ta 25C (Note 2) Parameter Symbol Conditions Value Unit min typ max Drain to Source Breakdown Voltage V(BR)DSS ID = 1 mA, VGS = 0 V 24 V Zero-Gate Voltage Drain Current IDSS VDS = 20 V, VGS = 0 V 1 A Gate to Source Leakage Current IGSS VGS = 8 V, VDS = 0 V 1 A Gate Threshold Voltage VGS(th) VDS = 10 V, ID = 1 mA 0.5 1.3 V Forward Transconductance gFS VDS = 10 V, ID = 5 A 5.0 S Static Drain to Source On-State Resistance RDS(on) ID = 5 A, VGS = 4.5 V 7.4 9.3 11.6 m ID = 5 A, VGS = 4.0 V 7.7 9.7 12.6 m ID = 5 A, VGS = 3.1 V 8.5 10.7 15 m ID = 2.5 A, VGS = 2.5 V 10 12.5 17.5 m Turn-ON Delay Time td(on) See Fig. 1 (Note 3) 160 ns Rise Time tr 230 ns Turn-OFF Delay Time td(off) 19.7 s Fall Time tf 23.6 s Turn-ON Delay Time td(on) See Fig. 2 (Note 3) 160 ns Rise Time tr 230 ns Turn-OFF Delay Time td(off) 980 s Fall Time tf 350 s Total Gate Charge Qg VDS = 10 V, VGS = 4.5 V, ID = 10 A 6 nC Gate to Source Charge Qgs 1.1 nC Gate to Drain “Miller” Charge Qgd 0.9 nC Forward Diode Voltage VSD IS = 10 A, VGS = 0 V 0.8 1.2 V Note 2 : Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. Note 3 : The fall switching time is dependent on the input pulse width. Fig.1 Switching Time Test Circuit 1 Fig.2 Switching Time Test Circuit 2 PW >10ms D.C. ≤1% P.G 50 Ω G S D ID=5A RL=2Ω Rg=1.2kΩ VDD=10V VOUT VIN 4.5V 0V VIN ECH8697R PW=10 μs D.C. ≤1% P.G 50 Ω G S D ID=5A RL=2Ω Rg=1.2kΩ VDD=10V VOUT VIN 4.5V 0V VIN ECH8697R |
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