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TM8050H-8W Datasheet(PDF) 2 Page - STMicroelectronics |
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TM8050H-8W Datasheet(HTML) 2 Page - STMicroelectronics |
2 / 9 page Characteristics TM8050H-8W 2/9 Doc029171 Rev 1 1 Characteristics Table 2: Absolute ratings (limiting values) Symbol Parameter Value Unit IT(RMS) RMS on-state current (180 ° conduction angle) TC = 126 °C 80 A IT(AV) Average on-state current (180 ° conduction angle) 50 A ITSM Non repetitive surge peak on-state current tp = 8.3 ms Tj initial = 25 °C 731 A tp = 10 ms 670 I2t I2t value for fusing Tj = 25 °C 2245 A2s VRRM / VDRM Maximum repetitive symmetric blocking voltage 800 V dl/dt Critical rate of rise of on- state current IG = 2 x IGT , tr ≤ 100 ns f = 50 Hz Tj = 25 °C 200 A/µs IGM Peak gate current tp = 20 µs Tj = 150 °C 8 A PG(AV) Average gate power dissipation Tj = 150 °C 1 W VRGM Maximum peak reverse gate voltage 5 V Tstg Storage junction temperature range -40 to +150 °C Tj Maximum operating junction temperature -40 to +150 °C Table 3: Electrical characteristics (Tj = 25 °C unless otherwise specified) Symbol Test Conditions Value Unit IGT VD = 12 V, RL = 33 Ω Min. 2.5 mA Max. 50 VGT VD = 12 V, RL = 33 Ω Max. 1.5 V VGD VD = VDRM, RL = 3.3 kΩ Tj = 150 °C Min. 0.2 V IH IT = 500 mA, gate open Max. 100 mA IL IG = 1.2 x IGT Max. 125 mA tgt IT = 80 A, VD = VDRM, IG = 200 mA, dIG/dt = 0.2 A/µs Typ. 3 µs dV/dt VD = 67 % VDRM, gate open Tj = 150 °C Min. 1000 V/µs tq IT = 33 A, dIT/dt = 10 A/µs, VR = 75 V, VD = 400 V, dVD/dt = 20 V/µs, tP = 100 µs Tj = 150 °C Max. 150 µs VTM ITM = 160 A, tP = 380 µs Tj = 25 °C Max. 1.55 V VTO Threshold voltage Tj = 150 °C Max. 0.85 V RD Dynamic resistance Tj = 150 °C Max. 5.5 mΩ IDRM VD = VDRM = VR = VRRM = 800 V Tj = 25 °C Max. 20 µA IRRM Tj = 150 °C Max. 2.5 mA |
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