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T2550-12I Datasheet(PDF) 2 Page - STMicroelectronics

Part # T2550-12I
Description  High static and dynamic commutation
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

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Characteristics
T2550-12x
2/12
DocID025554 Rev 3
1
Characteristics
Table 2. Absolute ratings (limiting values, Tj = 25 °C unless otherwise stated)
Symbol
Parameter
Value
Unit
IT(RMS
On-state RMS current (180° conduction angle)
D²PAK,
TO-220AB
Tc = 100 °C
25
A
TO-220AB Ins. Tc = 71°C
ITSM
Non repetitive surge peak on-state current (Tj initial = 25 °C)
tp = 16.7 ms
252
A
tp = 20 ms
240
I²tI²t value for fusing
tp = 10 ms
380
A²s
VRRM,
VDRM
Repetitive peak off-state voltage
Tj = 125 °C
1200
V
dI/dt
Critical rate of rise of on-state current
IG = 2 x IGT, tr  100 ns
F = 60 Hz
Tj = 125 °C
100
A/µs
IGM
Peak gate current
tp = 20 µs
4
A
VGM
Peak positive gate voltage
tp = 20 µs
16
V
PG(AV)
Average gate power dissipation
1
W
Tstg
Storage junction temperature range
- 40 to + 150
°C
Tj
Operating junction temperature range
- 40 to + 125
°C
Vins
Insulation RMS voltage, 1 minute
TO-220AB Ins.
2500
V
Table 3. Electrical characteristics (Tj = 25 °C, unless otherwise specified)
Symbol
Test conditions
Quadrant
Tj
Value
Unit
IGT
(1)
VD = 12 V, RL = 33 Ω
I - II - III
25 °C
Min.
2.5
mA
Max.
50
VGT
VD = 12 V, RL = 33 Ω
I - II - III
25 °C
Max.
1.3
V
VGD
VD = VDRM, RL = 3.3 k Ω
I - II - III
125 °C
Min.
0.2
V
IH
(2)
IT = 500 mA, gate open
25 °C
Max.
60
mA
IL
IG = 1.2 IGT
I - II - III
25 °C
Max.
80
mA
dV/dt
VD = 67% VDRM/VRRM, gate open
125 °C
Min.
2500
V/µs
(dI/dt)c
Without snubber
125 °C
Min.
20
A/ms
tgt
ITM = 13 A, VD = 400 V, IG = 100 mA,
dlG/dt = 100 mA/µs, RL = 30 Ω
I - II - III
25 °C
Typ
2
µs
1.
Minimum IGT is guaranteed at 5% of IGT max.
2.
For both polarities of A2 referenced to A1


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