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T2550-12I Datasheet(PDF) 2 Page - STMicroelectronics |
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T2550-12I Datasheet(HTML) 2 Page - STMicroelectronics |
2 / 12 page Characteristics T2550-12x 2/12 DocID025554 Rev 3 1 Characteristics Table 2. Absolute ratings (limiting values, Tj = 25 °C unless otherwise stated) Symbol Parameter Value Unit IT(RMS On-state RMS current (180° conduction angle) D²PAK, TO-220AB Tc = 100 °C 25 A TO-220AB Ins. Tc = 71°C ITSM Non repetitive surge peak on-state current (Tj initial = 25 °C) tp = 16.7 ms 252 A tp = 20 ms 240 I²tI²t value for fusing tp = 10 ms 380 A²s VRRM, VDRM Repetitive peak off-state voltage Tj = 125 °C 1200 V dI/dt Critical rate of rise of on-state current IG = 2 x IGT, tr 100 ns F = 60 Hz Tj = 125 °C 100 A/µs IGM Peak gate current tp = 20 µs 4 A VGM Peak positive gate voltage tp = 20 µs 16 V PG(AV) Average gate power dissipation 1 W Tstg Storage junction temperature range - 40 to + 150 °C Tj Operating junction temperature range - 40 to + 125 °C Vins Insulation RMS voltage, 1 minute TO-220AB Ins. 2500 V Table 3. Electrical characteristics (Tj = 25 °C, unless otherwise specified) Symbol Test conditions Quadrant Tj Value Unit IGT (1) VD = 12 V, RL = 33 Ω I - II - III 25 °C Min. 2.5 mA Max. 50 VGT VD = 12 V, RL = 33 Ω I - II - III 25 °C Max. 1.3 V VGD VD = VDRM, RL = 3.3 k Ω I - II - III 125 °C Min. 0.2 V IH (2) IT = 500 mA, gate open 25 °C Max. 60 mA IL IG = 1.2 IGT I - II - III 25 °C Max. 80 mA dV/dt VD = 67% VDRM/VRRM, gate open 125 °C Min. 2500 V/µs (dI/dt)c Without snubber 125 °C Min. 20 A/ms tgt ITM = 13 A, VD = 400 V, IG = 100 mA, dlG/dt = 100 mA/µs, RL = 30 Ω I - II - III 25 °C Typ 2 µs 1. Minimum IGT is guaranteed at 5% of IGT max. 2. For both polarities of A2 referenced to A1 |
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