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T635T-8T Datasheet(PDF) 5 Page - STMicroelectronics |
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T635T-8T Datasheet(HTML) 5 Page - STMicroelectronics |
5 / 9 page DocID024571 Rev 3 5/9 T635T-8T Characteristics Figure 13. Relative variation of leakage current versus junction temperature for different values of blocking voltage (typical values) Figure 11. Relative variation of critical rate of decrease of main current (dI/dt)c versus reapplied (dV/dt)c (typical values) Figure 12. Relative variation of critical rate of decrease of main current (dI/dt)c versus junction temperature (typical values) (dI/dt)c [(dV/dt)] / Specified (dI/dt)c 0 1 2 3 4 5 0.1 1.0 10.0 100.0 Tj =150 °C (dV/dt)c (V/µs) (dl / dt)c [Tj] / (dl / dt)c [Tj = 150 °C] 0 1 2 3 4 5 6 7 8 25 50 75 100 125 150 T (°C) j I , I @ [T ]; V , V ] / I , I T DRM RRM j DRM RRM DRM RRM @ [ jmax]* 1.0E-04 1.0E-03 1.0E-02 1.0E-01 1.0E+00 25 50 75 100 125 150 V DRM=VRRM=800 V V DRM=VRRM=600 V V DRM=VRRM=400 V T (°C) j [Tjmax = 125 °C; 800 V] [Tjmax = 150 °C; 600 V] *IDRM, IRRM @: |
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