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STQ2LN60K3-AP Datasheet(PDF) 3 Page - STMicroelectronics |
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STQ2LN60K3-AP Datasheet(HTML) 3 Page - STMicroelectronics |
3 / 13 page STQ2LN60K3-AP Electrical ratings DocID023499 Rev 3 3/13 1 Electrical ratings Table 2: Absolute maximum ratings Symbol Parameter Value Unit VDS Drain-source voltage 600 V VGS Gate-source voltage ±30 V ID Drain current (continuous) at TC = 25 °C 0.6 A ID Drain current (continuous) at TC = 100 °C 0.38 A IDM (1) Drain current (pulsed) 2.4 A PTOT Total dissipation at TC = 25 °C 2.5 W dv/dt (2) Peak diode recovery voltage slope 12 V/ns Tstg Storage temperature range -55 to 150 °C Tj Operating junction temperature range Notes: (1)Pulse width limited by safe operating area. (2)ISD ≤ 2 A, di/dt ≤ 400 A/µs, VDS(peak) < V(BR)DSS Table 3: Thermal data Symbol Parameter Value Unit Rthj-case Thermal resistance junction-case 50 °C/W Rthj-amb Thermal resistance junction-ambient 120 °C/W Table 4: Avalanche characteristics Symbol Parameter Value Unit IAS Single pulse avalanche current (pulse width limited by Tjmax) 2 A EAS Single pulse avalanche energy (starting TJ=25 °C, ID=IAR, VDD=50 V) 80 mJ |
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