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Datasheet

Datasheet

BM2PXX5F/BM2PXX6F/BM2PXX7F/BM2PXX8F Series

TSZ02201-0F2F0A200210-1-2

28.Oct.2016.Rev.002

© 2012 ROHM Co., Ltd. All rights reserved.

www.rohm.com

TSZ22111・15・001

●Absolute Maximum Ratings （Ta=25

C）

Parameter

Symbol

Rating

Unit

Conditions

Maximum applied voltage 1

V

max1

-0.3 to 32.0

V

VCC

Maximum applied voltage 2

V

max2

-0.3 to 6.5

V

SOURCE, FB, FADJ

Maximum applied voltage 3

V

max3

650

V

DRAIN

Drain current pulse

I

DP

2.60

A

(BM2Px5xF)

Drain current pulse

I

DP

1.30

A

(BM2Px9xF)

Power dissipation

P

d

0.56

W

When implemented

Operating

temperature range

T

opr

-40 to +105

MAX junction temperature

T

jmax

150

Storage

temperature range

T

str

-55 to +150

SOP8 : When mounted (on 70 mm × 70 mm, 1.6 mm thick, glass epoxy on single-layer substrate)

Caution: Operating the IC over the absolute maximum ratings may damage the IC. The damage can either be a short circuit between pins or an open circuit

between pins and the internal circuitry. Therefore, it is important to consider circuit protection measures, such as adding a fuse, in case the IC is operated over the

absolute maximum ratings.

●Operating Conditions （Ta=25

C）

Parameter

Symbol

Rating

Unit

Conditions

Power supply voltage range 1

8.9 to 26.0

V

VCC pin voltage

Power supply voltage range 2

V

DRAIN

650

V

DRAIN pin voltage

●Electrical Characteristics of MOSFET (unless otherwise noted, Ta = 25

C, VCC = 15V)

Parameter

Symbol

Specifications

Unit

Conditions

Min

Typ

Max

[MOSFET Block]

Between drain and

source voltage

V

(BR)DDS

650

-

-

V

I

Drain leak current

I

DSS

-

-

100

uA

V

On resistance

R

DS(ON)

-

4.0

5.5

Ω

I

(BM2Px5xF)

On resistance

R

DS(ON)

-

8.5

12.0

Ω

I

(BM2Px9xF)