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DRV8320R Datasheet(PDF) 9 Page - Texas Instruments |
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DRV8320R Datasheet(HTML) 9 Page - Texas Instruments |
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9 / 89 page  9 DRV8320, DRV8320R DRV8323, DRV8323R www.ti.com SLVSDJ3A – FEBRUARY 2017 – REVISED APRIL 2017 Product Folder Links: DRV8320 DRV8320R DRV8323 DRV8323R Submit Documentation Feedback Copyright © 2017, Texas Instruments Incorporated (1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. (2) Continuous high-side gate pin (GHx) and phase node pin voltage (SHx) should be limited to –2 V minimum for an absolute maximum of 65 V on VM. At 60 V and below, the full specification of –5 V continuous on GHx and SHx is allowable. 7 Specifications 7.1 Absolute Maximum Ratings at TA = –40°C to +125°C (unless otherwise noted) (1) MIN MAX UNIT GATE DRIVER Power supply pin voltage (VM) –0.3 65 V Voltage differential between ground pins (AGND, BGND, DGND, PGND) –0.3 0.3 V MOSFET drain sense pin voltage (VDRAIN) –0.3 65 V Charge pump pin voltage (CPH, VCP) –0.3 VVM + 13.5 V Charge-pump negative-switching pin voltage (CPL) –0.3 VVM V Internal logic regulator pin voltage (DVDD) –0.3 3.8 V Digital pin voltage (CAL, ENABLE, GAIN, IDRIVE, INHx, INLx, MODE, nFAULT, nSCS, SCLK, SDI, SDO, VDS) –0.3 5.75 V Continuous high-side gate drive pin voltage (GHx) –5(2) VVCP + 0.5 V Transient 200-ns high-side gate drive pin voltage (GHx) –7 VVCP + 0.5 V High-side gate drive pin voltage with respect to SHx (GHx) –0.3 13.5 V Continuous high-side source sense pin voltage (SHx) –5(2) VVM + 5 V Transient 200-ns high-side source sense pin voltage (SHx) –7 VVM + 7 V Continuous low-side gate drive pin voltage (GLx) –0.5 13.5 V Gate drive pin source current (GHx, GLx) Internally limited A Gate drive pin sink current (GHx, GLx) Internally limited A Continuous low-side source sense pin voltage (SLx) –1 1 V Transient 200-ns low-side source sense pin voltage (SLx) –3 3 V Continuous shunt amplifier input pin voltage (SNx, SPx) –1 1 V Transient 200-ns shunt amplifier input pin voltage (SNx, SPx) –3 3 V Reference input pin voltage (VREF) –0.3 5.75 V Shunt amplifier output pin voltage (SOx) –0.3 VVREF + 0.3 V BUCK REGULATOR Power supply pin voltage (VIN) –0.3 65 V Shutdown control pin voltage (nSHDN) –0.3 VVIN V Voltage feedback pin voltage (FB) –0.3 7 V Bootstrap pin voltage with respect to SW (CB) –0.3 7 V Switching node pin voltage (SW) –0.3 VVIN V Switching node pin voltage less than 30-ns transients (SW) –2 VVIN V DRV832x Operating junction temperature, TJ –40 150 °C Storage temperature, Tstg –65 150 °C (1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process. Pins listed as ±2000 V may actually have higher performance. (2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process. Pins listed as ±500 V may actually have higher performance. 7.2 ESD Ratings VALUE UNIT V(ESD) Electrostatic discharge Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) ±3000 V Charged-device model (CDM), per JEDEC specification JESD22-C101(2) ±1000 |
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Similar Description - DRV8320R |
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