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BQ24192IRGER Datasheet(PDF) 7 Page - Texas Instruments |
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BQ24192IRGER Datasheet(HTML) 7 Page - Texas Instruments |
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7 / 52 page  bq24190, bq24192, bq24192I www.ti.com SLUSAW5B – JANUARY 2012 – REVISED DECEMBER 2014 Electrical Characteristics (continued) VVBUS_UVLOZ < VVBUS < VACOV and VVBUS > VBAT + VSLEEP, TJ = –40°C to 125°C and TJ = 25°C for typical values unless other noted. PARAMETER TEST CONDITIONS MIN TYP MAX UNIT VBUS/BAT POWER UP VVBUS_OP VBUS operating range 3.9 17 V VVBUS_UVLOZ VVBUS rising 3.6 V VBUS for active I2C, no battery VSLEEP Sleep mode falling threshold VVBUS falling, VVBUS-VBAT 35 80 120 mV VSLEEPZ Sleep mode rising threshold VVBUS rising, VVBUS-VBAT 170 250 350 mV VACOV VBUS over-voltage rising threshold VVBUS rising 17.4 18 V VACOV_HYST VBUS over-voltage falling hysteresis VVBUS falling 700 mV VBAT_UVLOZ VBAT rising 2.3 V Battery for active I2C, no VBUS VBAT_DPL Battery depletion threshold VBAT falling 2.4 2.6 V VBAT_DPL_HY Battery depletion rising hysteresis VBAT rising 170 260 mV VVBUSMIN Bad adapter detection threshold VVBUS falling 3.8 V IBADSRC Bad adapter detection current source 30 mA tBADSRC Bad source detection duration 30 ms POWER PATH MANAGEMENT Isys = 0 A, Q4 off, VBAT up to 4.2 V, VSYS_RANGE Typical system regulation voltage 3.5 4.35 V REG01[3:1] = 101, VSYSMIN = 3.5 V VSYS_MIN System voltage output REG01[3:1] = 101, VSYSMIN = 3.5 V 3.55 3.65 V Internal top reverse blocking MOSFET on- RON(RBFET) Measured between VBUS and PMID 23 38 m Ω resistance TJ = –40°C to 85°C 27 35 Internal top switching MOSFET on-resistance RON(HSFET) m Ω between PMID and SW TJ = -40°C to 125°C 27 45 TJ = –40°C to 85°C 32 45 Internal bottom switching MOSFET on-resistance RON(LSFET) m Ω between SW and PGND TJ = -40°C to 125°C 32 48 VFWD BATFET forward voltage in supplement mode BAT discharge current 10 mA 30 mV VSYS_BAT SYS/BAT Comparator VSYS falling 90 mV VBATGD Battery good comparator rising threshold VBAT rising 3.55 V VBATGD_HYST Battery good comparator falling threshold VBAT falling 100 mV BATTERY CHARGER VBAT_REG_ACC Charge voltage regulation accuracy VBAT = 4.112 V and 4.208 V –0.5% 0.5% VBAT = 3.8 V, ICHG = 1792 mA, TJ = 25°C –4% 4% IICHG_REG_ACC Fast charge current regulation accuracy VBAT = 3.8 V, ICHG = 1792 mA, TJ = –20°C to –7% 7% 125°C ICHG_20pct Charge current with 20% option on VBAT = 3.1 V, ICHG = 104 mA, REG02 = 03 75 100 150 mA VBATLOWV Battery LOWV falling threshold Fast charge to precharge, REG04[1] = 1 2.6 2.8 2.9 V VBATLOWV_HYST Battery LOWV rising threshold Precharge to fast charge, REG04[1] = 1 2.8 3.0 3.1 V IPRECHG_ACC Precharge current regulation accuracy VBAT = 2.6 V, ICHG = 256 mA –20% 20% ITERM_ACC Termination current accuracy ITERM = 256 mA, ICHG = 960 mA –20% 20% VSHORT Battery Short Voltage VBAT falling 2.0 V VSHORT_HYST Battery Short Voltage hysteresis VBAT rising 200 mV ISHORT Battery short current VBAT < 2.2V 100 mA VRECHG Recharge threshold below VBAT_REG VBAT falling, REG04[0] = 0 100 mV tRECHG Recharge deglitch time VBAT falling, REG04[0] = 0 20 ms TJ = 25°C 12 15 RON_BATFET SYS-BAT MOSFET on-resistance m Ω TJ = –40°C to 125°C 12 20 Copyright © 2012–2014, Texas Instruments Incorporated Submit Documentation Feedback 7 Product Folder Links: bq24190 bq24192 bq24192I |
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