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BQ24156A Datasheet(PDF) 10 Page - Texas Instruments |
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BQ24156A Datasheet(HTML) 10 Page - Texas Instruments |
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10 / 52 page  Not Recommended for New Designs bq24153A, bq24156A, bq24159 10 bq24153A, bq24156A bq24158, bq24159 SLUSAB0D – OCTOBER 2010 – REVISED APRIL 2016 www.ti.com Product Folder Links: bq24153A bq24156A bq24158 bq24159 Submit Documentation Feedback Copyright © 2010–2016, Texas Instruments Incorporated Electrical Characteristics (continued) Circuit of Figure 25, VBUS = 5 V, HZ_MODE = 0, OPA_MODE = 0 (CD = 0), TJ = –40°C to 125°C, TJ = 25°C for typical values (unless otherwise noted) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT CHARGE MODE PROTECTION VOVP_IN_USB Input VBUS OVP threshold voltage (bq24153A/8) VBUS threshold to turn off converter during charge 6.3 6.5 6.7 V V(OVP_IN_USB) hysteresis (bq24153A/8) VBUS falling from above V(OVP_IN_USB) 170 mV VOVP-IN_DYN Input VBUS OVP threshold voltage (bq24156A) Threshold over VBUS to turn off converter during charge 9.57 9.8 10 V(OVP_IN_DYN) hysteresis (bq24156A/9) VBUS falling from above V(OVP_IN_DYN) 140 VOVP Output OVP threshold voltage V(CSOUT) threshold over V(OREG) to turn off charger during charge 110 117 121 %V OREG V(OVP) hysteresis Lower limit for V(CSOUT) falling from above V(OVP) 11 ILIMIT Cycle-by-cycle current limit for charge Charge mode operation 1.8 2.4 3.0 A VSHORT Trickle to fast charge threshold V(CSOUT) rising 2.0 2.1 2.2 V VSHORT hysteresis V(CSOUT) falling below VSHORT 100 mV ISHORT Trickle charge charging current V(CSOUT) ≤ VSHORT) 20 30 40 mA BOOST MODE OPERATION FOR VBUS (OPA_MODE = 1, HZ_MODE = 0, bq24153A/8 only) VBUS_B Boost output voltage (to VBUS pin) 2.5V < V(CSOUT) < 4.5 V 5.05 V Boost output voltage accuracy Including line and load regulation –3% 3% IBO Maximum output current for boost VBUS_B = 5.05 V, 2.5 V < V(CSOUT) < 4.5 V 200 mA IBLIMIT Cycle by cycle current limit for boost VBUS_B = 5.05 V, 2.5 V < V(CSOUT) < 4.5 V 1.0 A VBUSOVP Overvoltage protection threshold for boost (VBUS pin) Threshold over VBUS to turn off converter during boost 5.8 6.0 6.2 V VBUSOVP hysteresis VBUS falling from above VBUSOVP 162 mV VBATMAX Maximum battery voltage for boost (CSOUT pin) V(CSOUT) rising edge during boost 4.75 4.9 5.05 V VBATMAX hysteresis V(CSOUT) falling from above VBATMAX 200 mV VBATMIN Minimum battery voltage for boost (CSOUT pin) During boosting 2.5 V Before boost starts 2.9 3.05 V Boost output resistance at high-impedance mode (From VBUS to PGND) CD = 1 or HZ_MODE = 1 217 k Ω PROTECTION TSHTDWN) Thermal trip 165 °C Thermal hysteresis 10 TCF Thermal regulation threshold Charge current begins to reduce 120 |
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