NTBV45N06T4G datasheet(1/7 Pages) ONSEMI

Part #	NTBV45N06T4G

Description	Power MOSFET 45 Amps, 60 Volts

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Manufacturer	ONSEMI [ON Semiconductor]

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October, 2011 − Rev. 1

1

Publication Order Number:

NTB45N06/D

NTB45N06, NTBV45N06

Power MOSFET

45 Amps, 60 Volts

N−Channel D2PAK

Designed for low voltage, high speed switching applications in

power supplies, converters and power motor controls and bridge

circuits.

Features

• Higher Current Rating

• Lower RDS(on)

• Lower VDS(on)

• Lower Capacitances

• Lower Total Gate Charge

• Tighter VSD Specification

• Lower Diode Reverse Recovery Time

• Lower Reverse Recovery Stored Charge

• AEC−Q101 Qualified and PPAP Capable − NTBV45N06

• These Devices are Pb−Free and are RoHS Compliant

Typical Applications

• Power Supplies

• Converters

• Power Motor Controls

• Bridge Circuits

MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)

Rating

Symbol

Value

Unit

Drain−to−Source Voltage

VDSS

60

Vdc

Drain−to−Gate Voltage (RGS = 10 MW)

VDGR

60

Vdc

Gate−to−Source Voltage

− Continuous

− Non−Repetitive (tpv10 ms)

VGS

"20

"30

Vdc

Drain Current

− Continuous @ TA = 25°C

− Continuous @ TA = 100°C

− Single Pulse (tpv10 ms)

ID

IDM

45

30

150

Adc

Apk

Total Power Dissipation @ TA = 25°C

Derate above 25°C

Total Power Dissipation @ TA = 25°C (Note 1)

Total Power Dissipation @ TA = 25°C (Note 2)

PD

125

0.83

3.2

2.4

W

W/°C

W

Operating and Storage Temperature Range

TJ, Tstg

−55 to

+175

°C

Single Pulse Drain−to−Source Avalanche

Energy − Starting TJ = 25°C

(VDD = 50 Vdc, VGS = 10 Vdc, RG = 25 W,

IL(pk) = 40 A, L = 0.3 mH, VDS = 60 Vdc)

EAS

240

mJ

Thermal Resistance

− Junction−to−Case

− Junction−to−Ambient (Note 1)

− Junction−to−Ambient (Note 2)

RqJC

RqJA

1.2

46.8

63.2

°C/W

Maximum Lead Temperature for Soldering

Purposes, 1/8 in from case for 10 seconds

TL

260

°C

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. When surface mounted to an FR4 board using 1 in pad size, (Cu Area 1.127 in2).

2. When surface mounted to an FR4 board using the minimum recommended

pad size, (Cu Area 0.412 in2).

45 AMPERES, 60 VOLTS

RDS(on) = 26 mW

N−Channel

D

S

G

MARKING DIAGRAMS

& PIN ASSIGNMENTS

1

2

3

4

D2PAK

CASE 418B

STYLE 2

http://onsemi.com

See detailed ordering and shipping information in the package

dimensions section on page 2 of this data sheet.

ORDERING INFORMATION

NTx45N06 = Device Code

x

= B or P

A

= Assembly Location

Y

= Year

WW

= Work Week

G

= Pb−Free Package

NTx

45N06G

AYWW

1

Gate

3

Source

4

Drain

2

Drain

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