NDF05N50Z, NDD05N50Z

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2

THERMAL RESISTANCE

Parameter

Symbol

Value

Unit

Junction−to−Case (Drain)

NDF05N50Z

NDD05N50Z

4.2

1.5

°C/W

Junction−to−Ambient Steady State

(Note 3) NDF05N50Z

(Note 4) NDD05N50Z

(Note 3) NDD05N50Z−1

50

38

80

3. Insertion mounted

4. Surface mounted on FR4 board using 1″ sq. pad size, (Cu area = 1.127 in sq [2 oz] including traces).

Characteristic

Symbol

Test Conditions

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Drain−to−Source Breakdown Voltage

500

V

Breakdown Voltage Temperature Co-

efficient

Reference to 25°C,

0.6

V/°C

Drain−to−Source Leakage Current

25°C

1

mA

150°C

50

Gate−to−Source Forward Leakage

±10

mA

ON CHARACTERISTICS (Note 5)

Static Drain−to−Source

On−Resistance

1.25

1.5

W

Gate Threshold Voltage

3.0

3.9

4.5

V

Forward Transconductance

3.5

S

DYNAMIC CHARACTERISTICS

Input Capacitance (Note 6)

f = 1.0 MHz

421

530

632

pF

Output Capacitance (Note 6)

50

68

80

Reverse Transfer Capacitance

(Note 6)

8

15

25

Total Gate Charge (Note 6)

9

18.5

28

nC

Gate−to−Source Charge (Note 6)

2

4

6

Gate−to−Drain (“Miller”) Charge

(Note 6)

5

10

15

Plateau Voltage

6.5

V

Gate Resistance

1.5

4.5

8

W

RESISTIVE SWITCHING CHARACTERISTICS

Turn−On Delay Time

11

ns

Rise Time

15

Turn−Off Delay Time

24

Fall Time

14

Diode Forward Voltage

1.6

V

Reverse Recovery Time

255

ns

Reverse Recovery Charge

1.25

mC

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

performance may not be indicated by the Electrical Characteristics if operated under different conditions.

5. Pulse Width ≤ 380 ms, Duty Cycle ≤ 2%.

6. Guaranteed by design.