Electronic Components Datasheet Search |
|
NDD05N50Z-1G Datasheet(PDF) 2 Page - ON Semiconductor |
|
NDD05N50Z-1G Datasheet(HTML) 2 Page - ON Semiconductor |
2 / 10 page NDF05N50Z, NDD05N50Z www.onsemi.com 2 THERMAL RESISTANCE Parameter Symbol Value Unit Junction−to−Case (Drain) NDF05N50Z NDD05N50Z RqJC 4.2 1.5 °C/W Junction−to−Ambient Steady State (Note 3) NDF05N50Z (Note 4) NDD05N50Z (Note 3) NDD05N50Z−1 RqJA 50 38 80 3. Insertion mounted 4. Surface mounted on FR4 board using 1″ sq. pad size, (Cu area = 1.127 in sq [2 oz] including traces). ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Characteristic Symbol Test Conditions Min Typ Max Unit OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage BVDSS VGS = 0 V, ID = 1 mA 500 V Breakdown Voltage Temperature Co- efficient DBVDSS/ DTJ Reference to 25°C, ID = 1 mA 0.6 V/°C Drain−to−Source Leakage Current IDSS VDS = 500 V, VGS = 0 V 25°C 1 mA 150°C 50 Gate−to−Source Forward Leakage IGSS VGS = ±20 V ±10 mA ON CHARACTERISTICS (Note 5) Static Drain−to−Source On−Resistance RDS(on) VGS = 10 V, ID = 2.2 A 1.25 1.5 W Gate Threshold Voltage VGS(th) VDS = VGS, ID = 50 mA 3.0 3.9 4.5 V Forward Transconductance gFS VDS = 15 V, ID = 2.5 A 3.5 S DYNAMIC CHARACTERISTICS Input Capacitance (Note 6) Ciss VDS = 25 V, VGS = 0 V, f = 1.0 MHz 421 530 632 pF Output Capacitance (Note 6) Coss 50 68 80 Reverse Transfer Capacitance (Note 6) Crss 8 15 25 Total Gate Charge (Note 6) Qg VDD = 250 V, ID = 5 A, VGS = 10 V 9 18.5 28 nC Gate−to−Source Charge (Note 6) Qgs 2 4 6 Gate−to−Drain (“Miller”) Charge (Note 6) Qgd 5 10 15 Plateau Voltage VGP 6.5 V Gate Resistance Rg 1.5 4.5 8 W RESISTIVE SWITCHING CHARACTERISTICS Turn−On Delay Time td(on) VDD = 250 V, ID = 5 A, VGS = 10 V, RG = 5 W 11 ns Rise Time tr 15 Turn−Off Delay Time td(off) 24 Fall Time tf 14 SOURCE−DRAIN DIODE CHARACTERISTICS (TC = 25°C unless otherwise noted) Diode Forward Voltage VSD IS = 5 A, VGS = 0 V 1.6 V Reverse Recovery Time trr VGS = 0 V, VDD = 30 V IS = 5 A, di/dt = 100 A/ms 255 ns Reverse Recovery Charge Qrr 1.25 mC Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 5. Pulse Width ≤ 380 ms, Duty Cycle ≤ 2%. 6. Guaranteed by design. |
Similar Part No. - NDD05N50Z-1G |
|
Similar Description - NDD05N50Z-1G |
|
|
Link URL |
Privacy Policy |
ALLDATASHEET.COM |
Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Datasheet Upload | Contact us | Privacy Policy | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |