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SD103AX Datasheet(PDF) 1 Page - Galaxy Semi-Conductor Holdings Limited |
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SD103AX Datasheet(HTML) 1 Page - Galaxy Semi-Conductor Holdings Limited |
1 / 3 page Production specification Schottky Barrier Diode SD103AX H012 www.gmicroelec.com Rev.A 1 FEATURES Low forward voltage drop. Guard ring construction for transient protection. Low reverse recovery time. Low reverse capacitance. APPLICATIONS SOD-523 Schottky barrier application. ORDERING INFORMATION Type No. Marking Package Code SD103AX S4 SOD-523 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Parameter Symbol Limits Unit DC Reverse voltage VR 40 V Continuous forward current IF 350 mA Repetitive peak forward current @t≤1.0s IFRM 1 A Total power dissipation Ptot 200 mW Junction temperature Tj 125 ℃ Storage temperature Tstg -65 to +125 ℃ ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified Parameter Symbol Min. Typ. Max. Unit Conditions Reverse breakdown voltage V(BR)R 40 V IR=100μA Forward voltage VF 0.37 0.60 V IF=20mA IF=200mA Reverse current IR 5.0 μA VR=30V Diode capacitance Cd 50 pF VR=0V,f=1MHz Reverse recovery time trr 10 ns IF=IR=50mA,RL=100Ω Pb Lead-free |
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