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SSM6E01TU Datasheet(PDF) 8 Page - Toshiba Semiconductor |
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SSM6E01TU Datasheet(HTML) 8 Page - Toshiba Semiconductor |
8 / 9 page SSM6E01TU 2003-01-16 8 Q2 (Nch MOSFET) Drain current ID (mA) RDS (ON) – ID Drain current ID (mA) t – ID Ambient temperature Ta (°C) RDS (ON) – Ta Common source VDD = 3 V VGS = 0~2.5 V Ta = 25°C 10000 30 0.1 toff tf tr ton 50 100 300 500 0.3 1 3 10 100 1000 3000 5000 30 Common source Ta = 25°C 0 0 VGS = 4 V 10 2.5 20 40 60 80 100 2 4 6 8 Common source ID = 10 mA 0 -25 10 125 100 75 50 25 0 2 4 6 150 8 VGS = 4 V 2.5 |
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