SI6463BDQ datasheet(3/5 Pages) VISHAY

Part #	SI6463BDQ

Description	P-Channel 1.8-V (G-S) MOSFET

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Manufacturer	VISHAY [Vishay Siliconix]

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Si6463BDQ

Vishay Siliconix

New Product

Document Number: 72018

S-21782—Rev. A, 07-Oct-02

www.vishay.com

3

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)

0

1000

2000

3000

4000

5000

04

8

12

16

20

0.6

0.8

1.0

1.2

1.4

1.6

-50

-25

0

25

50

75

100

125

150

0

1

2

3

4

5

0

8

16

24

32

40

0.000

0.006

0.012

0.018

0.024

0.030

0

6

12

18

24

30

VDS - Drain-to-Source Voltage (V)

Crss

VDS = 10 V

ID = 7.4 A

ID - Drain Current (A)

VGS = 4.5 V

ID = 7.4 A

Gate Charge

On-Resistance vs. Drain Current

Qg - Total Gate Charge (nC)

Capacitance

On-Resistance vs. Junction Temperature

TJ - Junction Temperature (_C)

0.0

0.2

0.4

0.6

0.8

1.0

1.2

0.00

0.01

0.02

0.03

0.04

0.05

0.06

012

34

56

78

TJ = 25_C

ID = 7.4 A

30

10

1

Source-Drain Diode Forward Voltage

On-Resistance vs. Gate-to-Source Voltage

VSD - Source-to-Drain Voltage (V)

VGS - Gate-to-Source Voltage (V)

VGS = 4.5 V

TJ = 150_C

VGS = 2.5 V

VGS = 1.8 V

Coss

Ciss

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