BC372 datasheet(1/1 Pages) ZETEX

Part #	BC372

Description	NPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTOR

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Manufacturer	ZETEX [Zetex Semiconductors]

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NPN SILICON PLANAR MEDIUM

POWER DARLINGTON TRANSISTOR

ISSUE 2 SEPT 93

FEATURES

* 100 Volt VCEO

* Gain of 8k at IC=250mA

*IC=1 Amp

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

SYMBOL

VALUE

UNIT

Collector-Base Voltage

VCBO

100

V

Collector-Emitter Voltage

VCEO

100

V

Emitter-Base Voltage

VEBO

12

V

Continuous Collector Current

IC

1A

Power Dissipation at Tamb=25°C

Ptot

625

mW

Operating and Storage Temperature Range

Tj:Tstg

-55 to +150

°C

ELECTRICAL CHARACTERISTICS (at Tamb= 25°C).

PARAMETER

SYMBOL MIN.

TYP.

MAX.

UNIT

CONDITIONS.

Collector-Base

Breakdown Voltage

V(BR)CBO

100

V

IC=100µA, IE=0

Collector-Emitter

Breakdown Voltage

V(BR)CES

100

V

IC=100µA, IB=0*

Emitter-Base

Breakdown Voltage

V(BR)EBO

12

V

IE=10µA, IC=0

Collector Cut-Off

Current

ICBO

100

nA

VCB=80V, IE=0

Emitter Cut-Off Current IEBO

100

nA

VEB=10V, IC=0

Collector-Emitter

Saturation Voltage

VCE(sat)

1.0

V

IC=250mA, IB=0.25mA

Base-Emitter

Saturation Voltage

VBE(sat)

2V

IC=250mA, IB=0.25mA

Static Forward Current

Transfer Ratio

hFE

10K

8K

IC=100mA, VCE=5V*

IC=250mA, VCE=5V*

Transition

Frequency

fT

100

MHz

IC=100mA, VCE=5V

f=100MHz

Output Capacitance

Cobo

25

pF

VCB=10V, f=1MHz

BC372

3-16

E

B

C

TO92

PART OBSOLETE - USE ZTX603

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