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STP150N10F7 Datasheet(PDF) 3 Page - STMicroelectronics |
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STP150N10F7 Datasheet(HTML) 3 Page - STMicroelectronics |
3 / 15 page DocID024552 Rev 4 3/15 STI150N10F7, STP150N10F7 Electrical ratings 15 1 Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit VDS Drain-source voltage 100 V VGS Gate- source voltage ±20 V ID Drain current (continuous) at TC = 25 °C 110 A ID Drain current (continuous) at TC = 100 °C 110 A IDM (1) 1. Pulse width is limited by safe operating area Drain current (pulsed) 440 A PTOT Total dissipation at TC = 25 °C 250 W EAS (2) 2. Starting Tj=25 °C, ID=30 A, VDD=50 V Single pulse avalanche energy 495 mJ TJ Operating junction temperature -55 to 175 °C Tstg Storage temperature °C Table 3. Thermal data Symbol Parameter Value Unit Rthj-case Thermal resistance junction-case max 0.6 °C/W Rthj-amb Thermal resistance junction-ambient max 62.5 °C/W |
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