SI4340DY datasheet(3/9 Pages) VISHAY

Part #	SI4340DY

Description	Dual N-Channel 20-V (D-S) MOSFET with Schottky Diode

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Manufacturer	VISHAY [Vishay Siliconix]

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Si4340DY

Vishay Siliconix

New Product

Document Number: 72376

S-31857—Rev. A, 15-Sep-03

www.vishay.com

3

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)

CHANNEL−1

0

10

20

30

40

50

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

4.5

0

10

20

30

40

50

0

1234

5

VGS = 10 thru 4 V

TC = 125_C

-55_C

2 V

25_C

Output Characteristics

Transfer Characteristics

VDS - Drain-to-Source Voltage (V)

VGS - Gate-to-Source Voltage (V)

3 V

0

300

600

900

1200

1500

1800

04

8

12

16

20

0.6

0.8

1.0

1.2

1.4

1.6

-50

-25

0

25

50

75

100

125

150

0

1

2

3

4

5

6

0.0

2.6

5.2

7.8

10.4

13.0

0.000

0.004

0.008

0.012

0.016

0.020

0

10203040

50

VDS - Drain-to-Source Voltage (V)

Crss

Coss

Ciss

VDS = 10 V

ID = 9.6 A

ID - Drain Current (A)

VGS = 10 V

ID = 9.6 A

VGS = 10 V

VGS = 4.5 V

Gate Charge

On-Resistance vs. Drain Current

Qg - Total Gate Charge (nC)

Capacitance

On-Resistance vs. Junction Temperature

TJ - Junction Temperature (_C)

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