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STFU15N80K5 Datasheet(PDF) 5 Page - STMicroelectronics |
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STFU15N80K5 Datasheet(HTML) 5 Page - STMicroelectronics |
5 / 13 page STFU15N80K5 Electrical characteristics DocID027658 Rev 2 5/13 Table 7: Source drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit ISD Source-drain current - 14 A ISDM Source-drain current (pulsed) - 56 A VSD(1) Forward on voltage ISD = 14 A, VGS = 0 V - 1.5 V trr Reverse recovery time ISD = 14 A, di/dt = 100 A/µs, VDD = 60 V - 445 ns Qrr Reverse recovery charge - 8.2 µC IRRM Reverse recovery current - 37 A trr Reverse recovery time ISD = 14 A, di/dt = 100 A/µs, VDD = 60 V, Tj = 150 °C - 580 ns Qrr Reverse recovery charge - 10 µC IRRM Reverse recovery current - 35 A Notes: (1)Pulsed: pulse duration = 300μs, duty cycle 1.5%. Table 8: Gate-source Zener diode Symbol Parameter Test conditions Min. Typ. Max. Unit V(BR)GSO Gate-source breakdown voltage IGS = ±1mA, ID = 0 V 30 - - V The built-in back-to-back Zener diodes are specifically designed to enhance the ESD performance of the device. The Zener voltage facilitates efficient and cost-effective device integrity protection, thus eliminating the need for additional external componentry. |
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