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STU7N80K5 Datasheet(PDF) 3 Page - STMicroelectronics |
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STU7N80K5 Datasheet(HTML) 3 Page - STMicroelectronics |
3 / 21 page DocID023448 Rev 5 3/21 STD7N80K5, STP7N80K5, STU7N80K5 Electrical ratings 21 1 Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit VGS Gate- source voltage ± 30 V ID Drain current (continuous) at TC = 25 °C 6 A ID Drain current (continuous) at TC = 100 °C 3.8 A IDM (1) 1. Pulse width limited by safe operating area. Drain current (pulsed) 24 A PTOT Total dissipation at TC = 25 °C 110 W IAR Max current during repetitive or single pulse avalanche (pulse width limited by Tjmax) 2A EAS Single pulse avalanche energy (starting TJ = 25 °C, ID=IAS, VDD= 50 V) 88 mJ dv/dt (2) 2. ISD ≤ 6 A, di/dt ≤ 100 A/µs, VDS(peak) ≤ V(BR)DSS Peak diode recovery voltage slope 4.5 V/ns Tj Operating junction temperature -55 to 150 °C Tstg Storage temperature °C Table 3. Thermal data Symbol Parameter Value Unit DPAK TO-220 IPAK Rthj-case Thermal resistance junction-case max 1.14 °C/W Rthj-amb Thermal resistance junction-amb max 62.5 100 °C/W Rthj-pcb (1) 1. When mounted on 1 inch² FR-4, 2 Oz copper board. Thermal resistance junction-pcb max 50 °C/W |
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